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FM25C160B Fiches technique(PDF) 1 Page - Cypress Semiconductor

No de pièce FM25C160B
Description  16Kb Serial 5V F-RAM Memory
Download  14 Pages
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Fabricant  CYPRESS [Cypress Semiconductor]
Site Internet  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM25C160B Fiches technique(HTML) 1 Page - Cypress Semiconductor

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This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s
internal qualification testing and has reached production status.
Cypress Semiconductor Corporation
198 Champion Court
San Jose, CA 95134-1709
408-943-2600
Document Number: 001-84472 Rev. *A
Revised March 07, 2013
FM25C160B
16Kb Serial 5V F-RAM Memory
Features
16K bit Ferroelectric Nonvolatile RAM
Organized as 2,048 x 8 bits
High Endurance 1 Trillion (10
12) Read/Writes
38 year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz maximum Bus Frequency
Direct hardware replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
250 A Active Current (1 MHz)
4 A (typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40 C to +85 C
8-pin “Green”/RoHS SOIC (-G)
Description
The FM25C160B is a 16-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile but operates in other respects as a RAM.
It provides reliable data retention for 38 years while
eliminating the complexities, overhead, and system
level reliability problems caused by EEPROM and
other nonvolatile memories.
The FM25C160B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after it has been
successfully transferred to the device. The next bus
cycle may commence immediately without the need
for data polling. The FM25C160B is capable of
supporting up to 10
12 read/write cycles, or a million
times more write cycles than EEPROM.
These capabilities make the FM25C160B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25C160B provides substantial benefits to
users of serial EEPROM, in a hardware drop-in
replacement. The FM25C160B uses the high-speed
SPI bus, which enhances the high-speed write
capability of F-RAM technology. The specifications
are guaranteed over an industrial temperature range
of -40°C to +85°C.
Pin Configuration
Pin Name
Function
/CS
Chip Select
/WP
Write Protect
/HOLD
Hold
SCK
Serial Clock
SI
Serial Data Input
SO
Serial Data Output
VDD
5V
VSS
Ground
Ordering Information
FM25C160B-G
“Green” 8-pin SOIC
FM25C160B-GTR
“Green” 8-pin SOIC,
Tape & Reel
CS
SO
WP
VSS
VDD
HOLD
SCK
SI
1
2
3
4
8
7
6
5


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