2SC4226-T1-A datasheet(2/8 Pages) RENESAS

No de pièce	2SC4226-T1-A

Description	NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold

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Fabricant	RENESAS [Renesas Technology Corp]

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2SC4226

R09DS0022EJ0200 Rev.2.00

Page 2 of 6

Jun 29, 2011

ELECTRICAL CHARACTERISTICS (TA = +25

°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 10 V, IE = 0

−

1.0

μA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0

−

1.0

μA

DC Current Gain

hFE

Note 1

VCE = 3 V, IC = 7 mA

40

110

250

–

RF Characteristics

Gain Bandwidth Product

fT

VCE = 3 V, IC = 7 mA

3.0

4.5

–

GHz

Insertion Power Gain

⏐S21e⏐2

VCE = 3 V, IC = 7 mA, f = 1 GHz

7

9

–

dB

Noise Figure

NF

VCE = 3 V, IC = 7 mA, f = 1 GHz

−

1.2

2.5

dB

Reverse Transfer Capacitance

Cre

Note 2

VCB = 3 V, IE = 0, f = 1 MHz

−

0.7

1.5

pF

Notes 1. Pulse measurement: PW

≤ 350

μs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

R23/Y23

R24/Y24

R25/Y25

Marking

R23

R24

R25

hFE Value

40 to 80

70 to 140

125 to 250

<R>

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Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	2SC4228	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
	2SC4227	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD
	2SC5012	190Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
California Eastern Labs	NE68539	727Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
Renesas Technology Corp	2SC5011	190Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
California Eastern Labs	NE68718	306Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
Renesas Technology Corp	2SC3357	218Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
	2SC4536	181Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
	2SC4093	175Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
	2SC4957	189Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD

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2SC4226-T1-A Fiches technique(PDF) 2 Page - Renesas Technology Corp

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