Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

FDZ203N Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FDZ203N
Description  N-Channel 2.5V Specified PowerTrench BGA MOSFET
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDZ203N Fiches technique(HTML) 2 Page - Fairchild Semiconductor

  FDZ203N Datasheet HTML 1Page - Fairchild Semiconductor FDZ203N Datasheet HTML 2Page - Fairchild Semiconductor FDZ203N Datasheet HTML 3Page - Fairchild Semiconductor FDZ203N Datasheet HTML 4Page - Fairchild Semiconductor FDZ203N Datasheet HTML 5Page - Fairchild Semiconductor FDZ203N Datasheet HTML 6Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
FDZ203N Rev.E6(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
20
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
14
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
0.6
0.8
1.5
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
–3
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
ID = 7.5 A
VGS = 2.5 V,
ID = 5.5 A
VGS = 4.5 V, ID = 7.5 A, TJ=125°C
14
20
20
18
30
28
m
ID(on)
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V
20
A
gFS
Forward Transconductance
VDS = 10 V,
ID = 7.5 A
33
S
Dynamic Characteristics
Ciss
Input Capacitance
1127
pF
Coss
Output Capacitance
268
pF
Crss
Reverse Transfer Capacitance
VDS = 10 V,
V GS = 0 V,
f = 1.0 MHz
134
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
8
16
ns
tr
Turn–On Rise Time
11
20
ns
td(off)
Turn–Off Delay Time
26
42
ns
tf
Turn–Off Fall Time
VDD = 10V,
ID = 1 A,
VGS = 4.5 V,
RGEN = 6 Ω
8
16
ns
Qg
Total Gate Charge
11
15
nC
Qgs
Gate–Source Charge
2
nC
Qgd
Gate–Drain Charge
VDS = 10 V,
ID = 7.5 A,
VGS = 4.5 V
3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.3
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 1.3 A
(Note 2)
0.7
1.2
V
trr
Diode Reverse Recovery Time
20
nS
Qrr
Diode Reverse Recovery Charge
IF = 9A,
diF/dt = 100 A/µs
14
nC
Notes:
1.
RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.
a)
67 °C/W when
mounted on a 1in
2 pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b)
155 °C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. 2.
Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


Numéro de pièce similaire - FDZ203N

FabricantNo de pièceFiches techniqueDescription
logo
First Silicon Co., Ltd
FDZ20 FS-FDZ20 Datasheet
259Kb / 3P
   Zener Diode
logo
Fairchild Semiconductor
FDZ201N FAIRCHILD-FDZ201N Datasheet
37Kb / 4P
   N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
FDZ201N FAIRCHILD-FDZ201N Datasheet
177Kb / 6P
   N-Channel 2.5V Specified PowerTrench BGA MOSFET
FDZ201N FAIRCHILD-FDZ201N_04 Datasheet
177Kb / 6P
   N-Channel 2.5V Specified PowerTrench BGA MOSFET
FDZ202P FAIRCHILD-FDZ202P Datasheet
35Kb / 4P
   P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
More results

Description similaire - FDZ203N

FabricantNo de pièceFiches techniqueDescription
logo
Fairchild Semiconductor
FDZ201N FAIRCHILD-FDZ201N_04 Datasheet
177Kb / 6P
   N-Channel 2.5V Specified PowerTrench BGA MOSFET
FDZ204P FAIRCHILD-FDZ204P_04 Datasheet
169Kb / 6P
   P-Channel 2.5V Specified PowerTrench BGA MOSFET
FDZ202P FAIRCHILD-FDZ202P_04 Datasheet
169Kb / 6P
   P-Channel 2.5V Specified PowerTrench BGA MOSFET
FDZ2553NZ FAIRCHILD-FDZ2553NZ Datasheet
155Kb / 6P
   Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET
FDG311N FAIRCHILD-FDG311N Datasheet
89Kb / 5P
   N-Channel 2.5V Specified PowerTrench MOSFET
FDR6580 FAIRCHILD-FDR6580_01 Datasheet
87Kb / 5P
   N-Channel 2.5V Specified PowerTrench MOSFET
FDN339AN FAIRCHILD-FDN339AN Datasheet
259Kb / 8P
   N-Channel 2.5V Specified PowerTrench MOSFET
SI3446DV FAIRCHILD-SI3446DV Datasheet
93Kb / 5P
   Single N-Channel, 2.5V Specified PowerTrench MOSFET
FDR8305N FAIRCHILD-FDR8305N Datasheet
215Kb / 8P
   Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDS6814 FAIRCHILD-FDS6814 Datasheet
230Kb / 6P
   Dual N-Channel 2.5V Specified PowerTrench??MOSFET
More results


Html Pages

1 2 3 4 5 6


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com