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FDZ202P Fiches technique(PDF) 1 Page - Fairchild Semiconductor

No de pièce FDZ202P
Description  P-Channel 2.5V Specified PowerTrenchTM BGA MOSFET
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDZ202P Fiches technique(HTML) 1 Page - Fairchild Semiconductor

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November 1999
ADVANCE INFORMATION
1999 Fairchild Semiconductor Corporation
FDZ202P Rev. A (W)
FDZ202P
P-Channel 2.5V Specified PowerTrench
TM BGA MOSFET
General Description
Combining
Fairchild’s
advanced
2.5V
specified
PowerTrench process with state of the art BGA
packaging, the FDZ202P minimizes both PCB space
and
RDS(ON).
This
BGA
MOSFET
embodies
a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low RDS(ON).
Applications
•= Battery management
•= Load switch
•= Battery protection
Features
•= –5.5 A, –20 V. RDS(ON) = 0.045 Ω
=@ V
GS = –4.5 V
RDS(ON) = 0.075
Ω @ V
GS = –2.5 V.
•= Occupies only 5 mm2 of PCB area.
Only 55% of the area of SSOT-6
•= Ultra-thin package: less than 0.70 mm height when
mounted to PCB
•= Outstanding thermal transfer characteristics:
4 times better than SSOT-6
•= Ultra-low Qg x RDS(ON) figure-of-merit.
•= High power and current handling capability.
Pin 1
G
S
S
S
D
D
D
S
S
D
D
D
Bottom
Pin 1
Top
S
D
G
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
– Continuous
(Note 1a)
–5.5
A
– Pulsed
–20
PD
Power Dissipation (Steady State)
(Note 1a)
2.7
W
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +175
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
55
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
8
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
F202
FDZ202P
TBD
TBD
TBD


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