FDS8433A Rev. B1

Figure 7. Gate-Charge Characteristics.

Figure 8. Capacitance Characteristics.

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1.

Transient themal response will change depending on the circuit board design.

0.1

0.2

0.5

1

2

5

10

20

50

100

200

500

1000

2000

3000

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Ciss

f = 1 MHz

V

= 0 V

GS

Coss

Crss

0

4

8

121620

0

1

2

3

4

5

Q

, GATE CHARGE (nC)

g

V

= -5V

DS

-10V

-15V

I

=-5.0A

D

0.1

0.2

0.5

1

2

5

10

20

50

0.01

0.1

1

10

100

-V

, DRAIN-SOURCE VOLTAGE (V)

RD

S(O

N) L

IMI

T

DS

V

= -4.5V

SINGLE PULSE

R

= 125°C/W

T

= 25°C

θJA

GS

A

DC

1s

100m

s

10m

s

1m

s

10

s

100

us

0.001

0.01

0.1

1

10

100

300

0

10

20

30

40

50

SINGLE PULSE TIME (SEC)

SINGLE PULSE

R

=125°C/W

T = 25°C

θJA

A

0 .000 1

0.001

0.01

0.1

1

10

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , T IM E (se c)

1

Sin gle Pu ls e

D = 0.5

0.1

0.05

0.02

0.01

0.2

D uty C y cle, D = t /t

1

2

T - T

= P * R

(t)

A

J

P(p k )

R

(t) = r(t) * R

R

θJA

θJA

θJA