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FDG6323 Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FDG6323 Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page March 1999 FDG6323L Integrated Load Switch General Description Features Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter FDG6323L Units V IN Input Voltage Range 2.5 - 8 V V ON/OFF On/Off Voltage Range 1.5 - 8 V I L Load Current - Continuous (Note 1) 0.6 A - Pulsed (Note 1 & 3) 1.8 P D Maximum Power Dissipation (Note 2) 0.3 W T J,TSTG Operating and Storage Temperature Range -55 to 150 °C ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf/1500Ohm) 6 kV THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 2) 415 °C/W FDG6323L Rev.C This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.6A output current capability are needed. This load switch integrates a small N-Channel power MOSFET (Q1) which drives a large P-Channel power MOSFET (Q2) in one tiny SC70-6 package. V DROP=0.2V @ VIN=5V, IL=0.36A. R(ON) = 0.55Ω V DROP=0.2V @ VIN=2.5V, IL=0.27A. R(ON) = 0.75Ω. Very small package outline SC70-6. Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>6KV Human Body Model). High density cell design for extremely low on-resistance. Compact industry standard SC70-6 surface mount package. See Application Circuit 1 5 6 3 2 Q2 Q1 4 V , C OUT 1 R2 V , R IN 1 ON/OFF V R , C1 1 V , C OUT 1 IN OUT ON/OFF EQUIVALENT APPLICATION VDROP + - SOT-23 SuperSOT TM-8 SO-8 SOT-223 SC70-6 SuperSOT TM-6 SC70-6 pin 1 .23 © 1999 Fairchild Semiconductor Corporation |
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