SI4800BDY-T1-E3 datasheet(2/9 Pages) VISHAY

No de pièce	SI4800BDY-T1-E3

Description	N-Channel Reduced Qg, Fast Switching MOSFET

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 72124

S-83039-Rev. H, 29-Dec-08

Vishay Siliconix

Si4800BDY

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.8

1.8

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

µA

VDS = 30 V, VGS = 0 V, TJ = 55 °C

5

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

30

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 9 A

0.0155

0.0185

Ω

VGS = 4.5 V, ID = 7 A

0.023

0.030

Forward Transconductancea

gfs

VDS = 15 V, ID = 9 A

16

S

Diode Forward Voltagea

VSD

IS = 2.3 A, VGS = 0 V

0.75

1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = 15 V, VGS = 5.0 V, ID = 9 A

8.7

13

nC

Gate-Source Charge

Qgs

1.5

Gate-Drain Charge

Qgd

3.5

Gate Resistance

Rg

0.5

1.4

2.2

Ω

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 15 Ω

ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω

715

ns

Rise Time

tr

12

20

Turn-Off Delay Time

td(off)

32

50

Fall Time

tf

14

25

Source-Drain Reverse Recovery Time

trr

IF = 2.3 A, dI/dt = 100 A/µs

30

60

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