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FDD7030BL Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDD7030BL Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDD7030BL/FDU7030BL Rev. B(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID= 14A 174 mJ IAS Drain-Source Avalanche Current 14 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C 26 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ±20 V, V DS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.8 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C –5 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 14 A VGS = 4.5 V, ID = 12 A VGS = 10 V, ID = 14 A,TJ=125 °C 7.5 9.6 11 9.5 13 16 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A gFS Forward Transconductance VDS = 10 V, ID = 14 A 56 S Dynamic Characteristics Ciss Input Capacitance 1425 pF Coss Output Capacitance 350 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 150 pF RG Gate Resistance VOSC = 15 mV, f = 1.0 MHz 1.3 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 11 20 ns tr Turn–On Rise Time 9 18 ns td(off) Turn–Off Delay Time 31 50 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 13 23 ns Qg Total Gate Charge 14 20 nC Qgs Gate–Source Charge 4 nC Qgd Gate–Drain Charge VDS = 15V, ID = 14 A, VGS = 5 V 5 nC |
Numéro de pièce similaire - FDD7030BL |
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Description similaire - FDD7030BL |
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