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FDD6612A Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FDD6612A Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page February 2004 ©2004 Fairchild Semiconductor Corporation FDD6612A/FDU6612A Rev E(W) FDD6612A/FDU6612A 30V N-Channel PowerTrench ® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. Applications • DC/DC converter • Motor Drives Features • 30 A, 30 V RDS(ON) = 20 m Ω @ V GS = 10 V RDS(ON) = 28 m Ω @ V GS = 4.5 V • Low gate charge • Fast Switching • High performance trench technology for extremely low RDS(ON) G S D TO-252 D-PAK (TO-252) G D S I-PAK (TO-251AA) S G D Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current @TC=25°C (Note 3) 30 A @TA=25°C (Note 1a) 9.5 Pulsed (Note 1a) 60 Power Dissipation @TC=25°C (Note 1) 36 @TA=25°C (Note 1a) 2.8 PD @TA=25°C (Note 1b) 1.3 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 3.9 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 45 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6612A FDD6612A D-PAK (TO-252) 13’’ 12mm 2500 units FDU6612A FDU6612A I-PAK (TO-251) Tube N/A 75 |
Numéro de pièce similaire - FDD6612A |
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Description similaire - FDD6612A |
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