FDC6561 datasheet(1/8 Pages) FAIRCHILD

No de pièce	FDC6561

Description	Dual N-Channel Logic Level PowerTrenchTM MOSFET

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

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April 1999

FDC6561AN

Dual N-Channel Logic Level PowerTrench

TM MOSFET

General Description

Features

Absolute Maximum Ratings

T

A = 25°C unless otherwise note

Symbol

Parameter

Ratings

Units

V

DSS

Drain-Source Voltage

30

V

GSS

Gate-Source Voltage - Continuous

±20

V

I

D

Drain Current - Continuous

2.5

A

- Pulsed

10

P

D

Maximum Power Dissipation

(Note 1a)

0.96

W

(Note 1b)

0.9

(Note 1c)

0.7

T

J,TSTG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

RθJA

Thermal Resistance, Junction-to-Ambient (Note 1a)

130

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

60

°C/W

FDC6561AN Rev.C

These N-Channel

Logic

Level

MOSFETs are

produced using Fairchild Semiconductor's advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

low gate charge for superior switching performance.

These devices are well suited for all applications where

small size is desireable but especially low cost DC/DC

conversion in battery powered systems.

2.5 A, 30 V. R

DS(ON) = 0.095 Ω

@ V

GS = 10 V

R

DS(ON) = 0.145 Ω

@ V

GS = 4.5 V

Very fast switching.

Low gate charge (2.1nC typical).

SuperSOT

TM-6 package: small footprint (72% smaller than

standard SO-8); low profile (1mm thick).

SOIC-16

SOT-23

SuperSOT

TM-8

SO-8

SOT-223

SuperSOT

TM-6

D1

S2

G1

D2

S1

G2

SuperSOT -6

TM

pin 1

.561

1

5

3

2

6

4

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