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AM7441P Fiches technique(PDF) 1 Page - Analog Power

No de pièce AM7441P
Description  P-Channel 40-V (D-S) MOSFET
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Fabricant  ANALOGPOWER [Analog Power]
Site Internet  http://www.analogpowerinc.com/index.html
Logo ANALOGPOWER - Analog Power

AM7441P Fiches technique(HTML) 1 Page - Analog Power

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AM7441P
Analog Power
PRELIMINARY
Publication Order Number:
DS-AM7441_A
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
VDS (V)
rDS(on) m(Ω)ID (A)
26 @VGS=-10V
-12
33 @VGS=-4.5V
-11
PRODUCTSUMMARY
-40
P-Channel 40-V (D-S) MOSFET
•Low r
DS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8PP saves board space
Fast switching speed
High performance trench technology
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Symbol Maximum Units
VDS
-40
VGS
±20
TA=25
oC-12
TA=70
oC-10
IDM
±50
IS
-2.1
A
TA=25
oC5.0
TA=70
oC3.2
TJ, Tstg -55to150
oC
Continuous Source Current (Diode Conduction)
a
ABSOLUTEMAXIMUMRATINGS(TA = 25
oCUNLESSOTHERWISENOTED)
Parameter
PulsedDrainCurrent
b
V
Gate-Source Voltage
Drain-Source Voltage
Continuous DrainCurrent
a
ID
A
Power Dissipation
a
PD
OperatingJunctionandStorage Temperature Range
W
Symbol
Maximum Units
t <=10sec
25
oC/W
SteadyState
65
oC/W
THERMALRESISTANCERATINGS
Parameter
MaximumJunction-to-Ambient
a
RθJA
S
S
S
G
1
2
3
4
SOIC-8PP
Top View
D
D
D
D
8
7
6
5
S
D
G
P-Channel MOSFET


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