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AM70N03-04D Fiches technique(PDF) 1 Page - Analog Power |
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AM70N03-04D Fiches technique(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM70N03-04D N-Channel 30-V (D-S) MOSFET VDS (V) ID(A) 75 65 Symbol Limit Units VDS 30 VGS ±20 Continuous Drain Current a TA=25°C ID 75 IDM 300 IS 30 A Power Dissipation a TA=25°C PD 50 W TJ, Tstg -55 to 175 °C Symbol Maximum Units RθJA 40 RθJC 3 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage A PRODUCT SUMMARY 30 rDS(on) (mΩ) 6 @ VGS = 10V 8 @ VGS = 4.5V Maximum Junction-to-Ambient a Maximum Junction-to-Case Gate-Source Voltage Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM70N03-04D_1A |
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Description similaire - AM70N03-04D |
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