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AM4825P Fiches technique(PDF) 1 Page - Analog Power |
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AM4825P Fiches technique(HTML) 1 Page - Analog Power |
1 / 5 page 1 AM4825P Analog Power PRELIMINARY Publication Order Number: DS-AM4825_G These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. P-Channel 30-V (D-S) MOSFET •Low r DS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SOIC-8 saves board space • Fast switching speed • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VDS (V) rDS(on) m(Ω)ID (A) 13 @ VGS = -10V -11.5 19 @ VGS = -4.5V -9.3 PRODUCT SUMMARY -30 Symbol Maximum Units VDS -30 VGS ±25 TA=25 oC-11.5 TA=70 oC-9.3 IDM ±50 IS -2.1 A TA=25 oC3.1 TA=70 oC2.3 TJ, Tstg -55 to 150 oC Power Dissipation a PD Operating Junction and Storage Temperature Range W Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Symbol Maximum Units Maximum Junction-to-Case a t <= 5 sec RθJC 25 oC/W Maximum Junction-to-Ambient a t <= 5 sec RθJA 50 oC/W THERMAL RESISTANCE RATINGS Parameter 1 2 3 45 6 7 8 |
Numéro de pièce similaire - AM4825P |
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Description similaire - AM4825P |
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