AM4825P datasheet(1/5 Pages) ANALOGPOWER

No de pièce	AM4825P

Description	P-Channel 30-V (D-S) MOSFET

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Fabricant	ANALOGPOWER [Analog Power]

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AM4825P

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM4825_G

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r

DS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

P-Channel 30-V (D-S) MOSFET

•Low r

DS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

SOIC-8 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

VDS (V)

rDS(on) m(Ω)ID (A)

13 @ VGS = -10V

-11.5

19 @ VGS = -4.5V

-9.3

PRODUCT SUMMARY

-30

Symbol Maximum Units

VDS

-30

VGS

±25

TA=25

oC-11.5

TA=70

oC-9.3

IDM

±50

IS

-2.1

A

TA=25

oC3.1

TA=70

oC2.3

TJ, Tstg -55 to 150

oC

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

ID

A

Symbol

Maximum

Units

Maximum Junction-to-Case

a

t <= 5 sec

RθJC

25

oC/W

Maximum Junction-to-Ambient

a

t <= 5 sec

RθJA

50

oC/W

THERMAL RESISTANCE RATINGS

Parameter

1

2

3

45

6

7

8

Numéro de pièce similaire - AM4825P

Fabricant	No de pièce	Fiches technique	Description
SHENZHEN DOINGTER SEMIC...	AM4825P	2Mb / 7P	P-Channel MOSFET uses advanced trench technology
VBsemi Electronics Co.,...	AM4825P-T1-PF	1Mb / 9P	P-Channel 30-V (D-S) MOSFET
Analog Power	AM4825PE	196Kb / 3P	P-Channel 30-V (D-S) MOSFET

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Description similaire - AM4825P

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI2341DS	43Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 11-Aug-03
Vishay Siliconix	SI4835BDY	90Kb / 6P	P-Channel 30-V (D-S) MOSFET Rev. D, 25-Oct-0
Anachip Corp	AF4407	263Kb / 5P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI7423DN	173Kb / 3P	P-Channel 30-V (D-S) MOSFET 24-May-04
	SI2303ADS	39Kb / 4P	P-Channel, 30-V (D-S) MOSFET Rev. B, 29-Apr-02
	SI3481DV	67Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 16-Feb-04
DinTek Semiconductor Co...	DTM4415	286Kb / 9P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4435DDY-T1-GE3	279Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. C, 18-May-09
	SI7121DN	552Kb / 13P	P-Channel 30-V (D-S) MOSFET Rev. C, 23-Jun-08
	SI4825DDY-T1	242Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. A, 13-Oct-08
	SI7129DN	566Kb / 13P	P-Channel 30 V (D-S) MOSFET Rev. B, 06-Sep-10

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