AM4431P datasheet(1/5 Pages) ANALOGPOWER

No de pièce	AM4431P

Description	P-Channel 30-V (D-S) MOSFET

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Fabricant	ANALOGPOWER [Analog Power]

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Analog Power

AM4431P

P-Channel 30-V (D-S) MOSFET

VDS (V)

ID(A)

-21

-17

Symbol

Limit

Units

VDS

-30

VGS

±20

TA=25°C

-21

TA=70°C

-17

IDM

-80

IS

-4.8

A

TA=25°C

3.1

TA=70°C

2.2

TJ, Tstg

-55 to 150

°C

Symbol

Maximum

Units

40

80

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Pulsed Drain Current

b

ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)

V

Parameter

Drain-Source Voltage

PRODUCT SUMMARY

-30

rDS(on) (mΩ)

5 @ VGS = -10V

7 @ VGS = -4.5V

Gate-Source Voltage

Parameter

Continuous Drain Current

a

ID

A

Continuous Source Current (Diode Conduction)

a

Power Dissipation

a

PD

W

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Maximum Junction-to-Ambient

a

t <= 10 sec

RθJA

°C/W

Steady State

Key Features:

• Low rDS(on) trench technology

• Low thermal impedance

• Fast switching speed

Typical Applications:

• White LED boost converters

• Automotive Systems

• Industrial DC/DC Conversion Circuits

1

Publication Order Number:

DS_AM4431P_1A

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Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI2341DS	43Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 11-Aug-03
Vishay Siliconix	SI4835BDY	90Kb / 6P	P-Channel 30-V (D-S) MOSFET Rev. D, 25-Oct-0
Anachip Corp	AF4407	263Kb / 5P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI7423DN	173Kb / 3P	P-Channel 30-V (D-S) MOSFET 24-May-04
	SI2303ADS	39Kb / 4P	P-Channel, 30-V (D-S) MOSFET Rev. B, 29-Apr-02
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DinTek Semiconductor Co...	DTM4415	286Kb / 9P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4435DDY-T1-GE3	279Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. C, 18-May-09
	SI7121DN	552Kb / 13P	P-Channel 30-V (D-S) MOSFET Rev. C, 23-Jun-08
	SI4825DDY-T1	242Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. A, 13-Oct-08
	SI7129DN	566Kb / 13P	P-Channel 30 V (D-S) MOSFET Rev. B, 06-Sep-10

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