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STPSC1206D Fiches technique(PDF) 2 Page - STMicroelectronics

No de pièce STPSC1206D
Description  600 V power Schottky silicon carbide diode
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPSC1206D Fiches technique(HTML) 2 Page - STMicroelectronics

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Characteristics
STPSC1206
2/7
Doc ID 16288 Rev 1
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 1.2 x IF(AV) + 0.075 x IF
2
(RMS)
Table 2.
Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
IF(RMS)
Forward rms current
30
A
IF(AV)
Average forward current
Tc = 110 °C, δ = 0.5
12
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
50
40
200
A
IFRM
Repetitive peak forward current
Tc = 105 °C, Tj = 150 °C, δ = 0.1
50
A
Tstg
Storage temperature range
-55 to +175
°C
Tj
Operating junction temperature
-40 to +175
°C
Table 3.
Thermal resistance
Symbol
Parameter
Maximum value
Unit
Rth(j-c)
Junction to case
1.75
°C/W
Table 4.
Static electrical characteristics
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-
30
150
µA
Tj = 150 °C
-
200
1500
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 12 A
-1.4
1.7
V
Tj = 150 °C
-
1.6
2.1
1.
tp = 10 ms, δ < 2%
2.
tp = 500 µs, δ < 2%
Table 5.
Other parameters
Symbol
Parameter
Test conditions
Typ.
Unit
Qc
Total capacitive charge
Vr = 400 V, IF = 12 A
dIF/dt = -200 A/µs, Tj = 150 °C
12
nC
C
Total capacitance
Vr = 0 V, Tc = 25 °C, F = 1 Mhz
750
pF
Vr = 400 V, Tc = 25 °C, F = 1 Mhz
65


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