BAT46WJ datasheet(4/12 Pages) NXP

No de pièce	BAT46WJ

Description	Single Schottky barrier diode

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BAT46WJ

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Product data sheet

Rev. 2 — 8 November 2011

4 of 12

NXP Semiconductors

BAT46WJ

Single Schottky barrier diode

7.

Characteristics

[1]

Pulse test: tp  300 s;  0.02.

[2]

When switched from IF = 10 mA to IR =10mA; RL = 100 ; measured at IR =1mA.

Table 7.

Characteristics

Tamb =25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

forward voltage

[1]

IF = 0.1 mA

-

175

200

mV

IF = 10 mA

-

315

350

mV

IF =10mA; Tj = 40 C

-

470

mV

IF = 50 mA

-

415

475

mV

IF =50mA; Tj = 40 C

-

560

mV

IF = 250 mA

-

710

850

mV

IR

reverse current

[1]

VR = 1.5 V

-

0.2

0.5

A

VR = 1.5 V; Tj =60 C

--12

A

VR =10V

-

0.3

0.8

A

VR =10V; Tj =60 C

--20

A

VR =50V

-

0.7

2

A

VR =50V; Tj =60 C

--44

A

VR =75V

-

1

4

A

VR =75V; Tj =60 C

--80

A

VR =100 V

-

2

9

A

VR =100 V; Tj =60 C

-

120

A

VR =100 V; Tj =85 C

-

600

A

Cd

diode capacitance

f = 1 MHz

VR = 0 V

--39

pF

VR = 1 V

--21

pF

trr

reverse recovery time

[2] -5.9

-ns

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