AM1321P datasheet(1/5 Pages) ANALOGPOWER

No de pièce	AM1321P

Description	P-Channel 20-V (D-S) MOSFET

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AM1321P

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM1321_C

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r

DS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

VDS (V)

rDS(on) (OHM)

ID (A)

0.079 @VGS=-4.5V

-1.7

0.110 @VGS=-2.5V

-1.5

PRODUCTSUMMARY

-20

P-Channel 20-V (D-S) MOSFET

•Low r

DS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

SC70-3 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

D

S

G

Symbol Maximum Units

VDS

-20

VGS

±8

TA=25

oC-1.7

TA=70

oC-1.4

IDM

-2.5

IS

±0.28

A

TA=25

oC0.34

TA=70

oC0.22

TJ, Tstg -55to150

oC

Continuous Source Current (Diode Conduction)

a

ABSOLUTEMAXIMUMRATINGS(TA = 25

oCUNLESSOTHERWISENOTED)

Parameter

PulsedDrain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous DrainCurrent

a

ID

A

Power Dissipation

a

PD

OperatingJunctionandStorage Temperature Range

W

Symbol

Maximum Units

t <=5sec

375

Steady-State

430

THERMAL RESISTANCERATINGS

Parameter

oC/W

MaximumJunction-to-Ambient

a

RTHJA

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Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI9400DY	58Kb / 4P	P-Channel 20-V (D-S) MOSFET Rev. K, 02-Mar-98
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	SI4477DY-T1-GE3	261Kb / 10P	P-Channel 20-V (D-S) MOSFET Rev. A, 18-May-09
	SIA431DJ	221Kb / 9P	P-Channel 20-V (D-S) MOSFET Rev. B, 21-May-12
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Analog Power	AM4421P	423Kb / 5P	P-Channel 20-V (D-S) MOSFET

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