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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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BD375 Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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BD375 Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  ©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test: PW=350 µs, duty Cycle=2% Pulsed hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage : BD375 : BD377 : BD379 50 75 100 V V V VCEO Collector-Emitter Voltage : BD375 : BD377 : BD379 45 60 80 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 3 A IB Base Current 1 A PC Collector Dissipation (TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : BD375 : BD377 : BD379 IC = 100mA, IB = 0 45 60 80 V V V BVCBO Collector-Base : BD375 Breakdown Voltage : BD377 : BD379 IC = 100µA, IE = 0 50 75 100 V V V ICBO Collector Cut-off Current : BD375 : BD377 : BD379 VCB = 45V, IE = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 2 2 2 µA µA µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 100 µA hFE1 hFE2 * DC Current Gain VCE = 2V, IC = 0.15A VCE = 2V, IC = 1A 40 20 375 VCE(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.1A 1 V VBE(on) * Base-Emitter ON Voltage VCE = 2V, IC = 1A 1.5 V tON Turn ON Time VCC = 30V, IC = 0.5A IB1 = - IB2 = 0.05A RL = 60Ω 50 ns tOFF Turn OFF Time 500 ns Classification 6 10 16 25 hFE1 40 ~ 100 63 ~ 160 100 ~ 250 150 ~ 375 BD375/377/379 Medium Power Linear and Switching Applications • Complement to BD376, BD378 and BD380 respectively 1 TO-126 1. Emitter 2.Collector 3.Base |
Numéro de pièce similaire - BD375 |
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Description similaire - BD375 |
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