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BCX79 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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BCX79 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 2 page PNP General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 045V V(BR)EBO Emitter-Base Breakdown Voltage IE = 1.0 µA, I C = 0 5.0 V ICEX Collector Cutoff Current VCE = 45 V, VBE = 0.2 V, TA = +100 °C 20 µA ICES Collector Cutoff Current VCE = 45 V, IE = 0, VCE = 45 V, IE = 0, TA = +125 °C 10 2.5 nA µA IEBO Emitter Cutoff Current VEB = 4.0 V, IC = 0 20 nA ON CHARACTERISTICS hFE DC Current Gain VCE = 5.0 V, IC = 2.0 mA VCE = 1.0 V, IC = 10 mA VCE = 1.0 V, IC = 100 mA 120 80 40 630 1,000 VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 2.5 mA 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC = 100 mA, IB = 2.5 mA 1.0 V VBE(on) Base-Emitter On Voltage VCE = 5.0 V, IC = 2.0 mA VCE = 1.0 V, IC = 100 mA 0.6 0.7 0.9 V V SMALL SIGNAL CHARACTERISTICS Ccb Collector-Base Capacitance VCB = 10 V, f = 1.0 MHz 4.5 pF Ceb Emitter-Base Capacitance VEB = 0.5 V, f = 1.0 MHz 15 pF hie Input Impedance IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz 1.6 8.5 k Ω hoe Output Admittance IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz 100 µmhos NF Noise Figure VCE = 5.0 V, IC = 0.2 mA, RS = 2.0 k Ω, f = 1.0 kHz 6.0 dB SWITCHING CHARACTERISTICS ton Turn-on Time VCC = 10 V, IC = 10 mA, VBB = 3.6 V, IB1 = IB2 = 1.0 mA 150 ns ton Turn-on Time VCC = 10 V, IC = 100 mA, VBB = 5.0 V, IB1 = IB2 = 10 mA 150 ns toff Turn-off Time VCC = 10 V, IC = 10 mA, VBB = 3.6 V, IB1 = IB2 = 1.0 mA 800 ns toff Turn-off Time VCC = 10 V, IC = 100 mA, VBB = 5.0 V, IB1 = IB2 = 10 mA 800 ns |
Numéro de pièce similaire - BCX79 |
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Description similaire - BCX79 |
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