BCW60A datasheet(2/2 Pages) FAIRCHILD

No de pièce	BCW60A

Description	NPN EPITAXIAL SILICON TRANSISTOR

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

Site Internet	http://www.fairchildsemi.com

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2 / 2 page

Rev. A2, August 2002

Electrical Characteristics T

a=25°C unless otherwise noted

Marking Code

Symbol

Parameter

Test Condition

Min.

Max.

Units

BVCEO

Collector-Emitter Breakdown Voltage

IC=2mA, IB=0

32

V

BVEBO

Emitter-Base Breakdown Voltage

IE=1µA, IC=0

5

V

ICES

Collector Cut-off Current

VCE=32V, VBE=0

20

nA

IEBO

Emitter Cut-off Current

VEB=4V, IC=0

20

nA

hFE

DC Current Gain

: BCW60B

: BCW60C

: BCW60D

: BCW60A

: BCW60B

: BCW60C

: BCW60D

: BCW60A

: BCW60B

: BCW60C

: BCW60D

VCE=5V, IC=10µA

VCE=5V, IC=2mA

VCE=1V, IC=50mA

20

40

100

120

180

250

380

60

70

90

100

220

310

460

630

VCE(sat)

Collector-Emitter Saturation Voltage

IC=50mA, IB=1.25mA

IC=10mA, IB=0.25mA

0.55

0.35

V

VBE(sat)

Base-Emitter Saturation Voltage

IC=50mA, IB=1.25mA

IC=10mA, IB=0.25mA

0.7

0.6

1.05

0.85

V

VBE(on)

Base-Emitter On Voltage

VCE=5V, IC=2mA

0.55

0.75

V

Cob

Output Capacitance

VCB=10V, IE=0, f=1MHz

4.5

pF

fT

Current Gain Bandwidth Product

IC=10mA, VCE=5V, f=100MHz

125

MHz

NF

Noise Figure

IC=0.2mA, VCE=5V

RG=2KΩ, f=1KHz

6dB

tON

Turn On Time

IC=10mA, IB1=1mA

150

ns

tOFF

Turn Off Time

VBB=3.6V, IB2=1mA

R1=R2=5K

Ω,R

L=990Ω

800

ns

Type

BCW60A

BCW60B

BCW60C

BCW60D

Mark.

AA

AB

AC

AD

AA

Marking

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