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BC337 Datasheet(Fiches technique) 1 Page - Fairchild Semiconductor

Numéro de pièce BC337
Description  SWITCHING AND AMPLIFIER APPLICATIONS
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
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©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a=25°C unless otherwise noted
Electrical Characteristics T
a=25°C unless otherwise noted
hFE Classification
Symbol
Parameter
Value
Units
VCES
Collector-Emitter Voltage
: BC337
: BC338
50
30
V
V
VCEO
Collector-Emitter Voltage
: BC337
: BC338
45
25
V
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
800
mA
PC
Collector Power Dissipation
625
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCEO
Collector-Emitter Breakdown Voltage
: BC337
: BC338
IC=10mA, IB=0
45
25
V
V
BVCES
Collector-Emitter Breakdown Voltage
: BC337
: BC338
IC=0.1mA, VBE=0
50
30
V
V
BVEBO
Emitter-Base Breakdown Voltage
IE=0.1mA, IC=0
5
V
ICES
Collector Cut-off Current
: BC337
: BC338
VCE=45V, IB=0
VCE=25V, IB=0
2
2
100
100
nA
nA
hFE1
hFE2
DC Current Gain
VCE=1V, IC=100mA
VCE=1V, IC=300mA
100
60
630
VCE (sat)
Collector-Emitter Saturation Voltage
IC=500mA, IB=50mA
0.7
V
VBE (on)
Base Emitter On Voltage
VCE=1V, IC=300mA
1.2
V
fT
Current Gain Bandwidth Product
VCE=5V, IC=10mA, f=50MHz
100
MHz
Cob
Output Capacitance
VCB=10V, IE=0, f=1MHz
12
pF
Classification
16
25
40
hFE1
100 ~ 250
160 ~ 400
250 ~ 630
hFE2
60-
100-
170-
BC337/338
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC327/BC328
1. Collector 2. Base 3. Emitter
TO-92
1




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