BAT18,215 datasheet(2/7 Pages) NXP

No de pièce	BAT18,215

Description	Silicon planar diode

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Fabricant	NXP [NXP Semiconductors]

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9397 750 13385

Product data sheet

Rev. 02 — 31 August 2004

2 of 7

Philips Semiconductors

BAT18

Silicon planar diode

4.

Marking

[1]

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China.

5.

Limiting values

6.

Thermal characteristics

[1]

Device mounted on a FR4 printed-circuit board.

7.

Characteristics

Table 3:

Marking

Type number

Marking code [1]

BAT18

10*

Table 4:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VR

continuous reverse voltage

-

35

V

IF

continuous forward current

-

100

mA

Tstg

storage temperature

−55

+125

°C

Tj

junction temperature

-

125

°C

Table 5:

Thermal characteristics

Tj = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Typ

Unit

Rth(j-tp)

thermal resistance from junction to tie-point

330

K/W

Rth(j-a)

thermal resistance from junction to ambient

[1] 500

K/W

Table 6:

Electrical characteristics

Symbol Parameter

Conditions

Min

Typ

Max Unit

VF

forward voltage

IF = 100 mA; see Figure 1

-

1.2

V

IR

reverse current

see Figure 2

VR = 20 V

-

100

nA

VR = 20 V; Tj =60 °C

--1

µA

Cd

diode capacitance VR = 20 V; f = 1 MHz; see Figure 3

-

0.8

1.0

pF

rD

diode forward

resistance

IF = 5 mA; f = 200 MHz; see Figure 4

-

0.5

0.7

Ω

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