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BAT18,215 Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BAT18,215 Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 9397 750 13385 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 31 August 2004 2 of 7 Philips Semiconductors BAT18 Silicon planar diode 4. Marking [1] * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China. 5. Limiting values 6. Thermal characteristics [1] Device mounted on a FR4 printed-circuit board. 7. Characteristics Table 3: Marking Type number Marking code [1] BAT18 10* Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR continuous reverse voltage - 35 V IF continuous forward current - 100 mA Tstg storage temperature −55 +125 °C Tj junction temperature - 125 °C Table 5: Thermal characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Typ Unit Rth(j-tp) thermal resistance from junction to tie-point 330 K/W Rth(j-a) thermal resistance from junction to ambient [1] 500 K/W Table 6: Electrical characteristics Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 100 mA; see Figure 1 - - 1.2 V IR reverse current see Figure 2 VR = 20 V - - 100 nA VR = 20 V; Tj =60 °C --1 µA Cd diode capacitance VR = 20 V; f = 1 MHz; see Figure 3 - 0.8 1.0 pF rD diode forward resistance IF = 5 mA; f = 200 MHz; see Figure 4 - 0.5 0.7 Ω |
Numéro de pièce similaire - BAT18,215 |
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Description similaire - BAT18,215 |
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