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DMG4511SK4-7 Fiches technique(PDF) 1 Page - Diodes Incorporated |
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DMG4511SK4-7 Fiches technique(HTML) 1 Page - Diodes Incorporated |
1 / 10 page DMG4511SK4 Document number: DS32042 Rev. 4 - 2 1 of 9 www.diodes.com July 2011 © Diodes Incorporated DMG4511SK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) ID TA = 25°C 35V 35m Ω @ V GS = 10V 13A -35V 45m Ω @ V GS = -10V -12A Description and Applications This new generation MOSFET has been designed to minimize the on- state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Backlighting • DC-DC Converters • Power management functions Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Complementary Pair MOSFET • Lead Free/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: TO252-4L • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram Below • Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.328 grams (approximate) Ordering Information (Note 3) Part Number Case Packaging DMG4511SK4-7 TO252-4L 3000 / Tape & Reel Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Top View Bottom View D 1 S 1 G 1 D 2 S 2 G 2 N-Channel MOSFET P-Channel MOSFET = Manufacturer’s Marking G4511S = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 – 53) G4511S YYWW |
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