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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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MMSF5P02HD Fiches technique(PDF) 7 Page - Motorola, Inc |
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MMSF5P02HD Fiches technique(HTML) 7 Page - Motorola, Inc |
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7 / 12 page  MMSF5P02HD 7 Motorola TMOS Power MOSFET Transistor Device Data t, TIME Figure 11. Reverse Recovery Time (trr) di/dt = 300 A/ µs Standard Cell Density High Cell Density tb trr ta trr SAFE OPERATING AREA The Forward Biased Safe Operating Area curve (Figure 12) defines the maximum simultaneous drain–to–source vol- tage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25 °C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the pro- cedures discussed in AN569, “Transient Thermal Resistance – General Data and Its Use.” Switching between the off–state and the on–state may tra- verse any load line provided neither rated peak current (IDM) nor rated voltage (VDSS) is exceeded, and that the transition time (tr, tf) does not exceed 10 µs. In addition the total power averaged over a complete switching cycle must not exceed (TJ(MAX) – TC)/(R θJC). A power MOSFET designated E–FET can be safely used in switching circuits with unclamped inductive loads. For reli- able operation, the stored energy from circuit inductance dis- sipated in the transistor while in avalanche must be less than the rated limit and must be adjusted for operating conditions differing from those specified. Although industry practice is to rate in terms of energy, avalanche energy capability is not a constant. The energy rating decreases non–linearly with an increase of peak current in avalanche and peak junction tem- perature. Although many E–FETs can withstand the stress of drain– to–source avalanche at currents up to rated pulsed current (IDM), the energy rating is specified at rated continuous cur- rent (ID), in accordance with industry custom. The energy rat- ing must be derated for temperature as shown in the accompanying graph (Figure 13). Maximum energy at cur- rents below rated continuous ID can safely be assumed to equal the values indicated. Figure 12. Maximum Rated Forward Biased Safe Operating Area 0.1 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 1.0 10 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT VGS = 20 V SINGLE PULSE TC = 25°C 10 0.1 dc 10 ms 1.0 100 100 1 ms TJ, STARTING JUNCTION TEMPERATURE (°C) 0 25 50 75 100 125 600 VDS = 25 V VGS = 4.5 V IL = 19 Apk L = 5.5 mH 150 400 200 800 Figure 13. Maximum Avalanche Energy versus Starting Junction Temperature 1000 |
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