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STP28NM50N Fiches technique(PDF) 9 Page - STMicroelectronics

No de pièce STP28NM50N
Description  N-channel Power MOSFETs developed using the second generation of MDmesh
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP28NM50N Fiches technique(HTML) 9 Page - STMicroelectronics

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STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Test circuits
Doc ID 17432 Rev 2
9/21
3
Test circuits
Figure 18.
Switching times test circuit for
resistive load
Figure 19.
Gate charge test circuit
Figure 20.
Test circuit for inductive load
switching and diode recovery times
Figure 21.
Unclamped inductive load test
circuit
Figure 22.
Unclamped inductive waveform
Figure 23.
Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
µF
3.3
µF
VDD
AM01469v1
VDD
47k
Ω
1k
Ω
47k
Ω
2.7k
Ω
1k
Ω
12V
Vi=20V=VGMAX
2200
µF
PW
IG=CONST
100
Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25
Ω
A
A
B
B
RG
G
FAST
DIODE
D
S
L=100
µH
µF
3.3
1000
µF
VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
µF
3.3
µF
VDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon
tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS


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