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STB28NM50N Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STB28NM50N
Description  N-channel Power MOSFETs developed using the second generation of MDmesh
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB28NM50N Fiches technique(HTML) 5 Page - STMicroelectronics

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STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Electrical characteristics
Doc ID 17432 Rev 2
5/21
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 250 V, ID = 10.5 A
RG =4.7 Ω VGS = 10 V
(see Figure 18)
-
13.6
19
62
52
-
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ. Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
21
84
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 21 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 21 A, di/dt = 100 A/µs
VDD = 400 V
(see Figure 23)
-
326
5
30
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 21 A, di/dt = 100 A/µs
VDD = 400 V, Tj = 150 °C
(see Figure 23)
-
376
6.2
33.2
ns
µC
A


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