STP26NM60N datasheet(5/24 Pages) STMICROELECTRONICS

No de pièce	STP26NM60N

Description	N-channel 600 V, 0.135 廓 typ., 20 A MDmesh??II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

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STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N Electrical characteristics

Doc ID 15642 Rev 5

5/23

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

600

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 600 V

VDS = 600 V, TC = 125 °C

1

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±0.1

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 10 A

0.135 0.165

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

-

1800

115

1.1

-

pF

Coss eq.

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

-

310

-

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 20 A,

VGS = 10 V,

(see Figure 19)

-

60

8.5

30

-

nC

Rg

Gate input resistance

f=1 MHz Gate DC Bias=0

Test signal level = 20 mV

open drain

-2.8

-

Ω

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 300 V, ID = 10 A

RG =4.7 Ω VGS = 10 V

(see Figure 18)

-

13

25

85

50

-

ns

Numéro de pièce similaire - STP26NM60N

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STP26NM60N	1Mb / 23P	N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
Inchange Semiconductor ...	STP26NM60N	317Kb / 2P	Isc N-Channel MOSFET Transistor
STMicroelectronics	STP26NM60ND	1Mb / 23P	Low input capacitance and gate charge
Inchange Semiconductor ...	STP26NM60ND	320Kb / 2P	isc N-Channel MOSFET Transistor

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Description similaire - STP26NM60N

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STF26NM60N	1Mb / 23P	N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
	STB30NM60N	768Kb / 18P	N-channel 600 V, 0.1 廓, 25 A, MDmesh??II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
	STF18NM60N	1Mb / 21P	N-channel 600 V, 0.26 廓 typ., 13 A MDmesh??II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247
	STB25NM60NX	578Kb / 18P	N-channel 600 V, 0.130 廓 , 21 A, MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
	STP18NM60N	1Mb / 21P	N-channel 600 V, 0.26 廓 typ., 13 A MDmesh??II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 October 2012 Rev 4
	STP13NM60N	989Kb / 21P	N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 packages
	STP24N60M2	1Mb / 22P	N-channel 600 V, 0.168 廓 typ., 18 A MDmesh II Plus??low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
	STF20N65M5	1Mb / 21P	N-channel 650 V, 0.160 廓 typ., 18 A MDmesh??V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages February 2013 Rev 2
	STB16NM50N	554Kb / 18P	N-channel 500 V - 0.21 廓 - 15 A MDmesh??II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP
	STX25NM50N	616Kb / 18P	N-channel 500 V, 0.11 廓, 22 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247

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