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1N3595 Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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1N3595 Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 2 page 1N3595, Rev. A 1N3595 Small Signal Diode Absolute Maximum Ratings* T A = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics DO-35 Color Band Denotes Cathode 2002 Fairchild Semiconductor Corporation Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Value Units V RRM Maximum Repetitive Reverse Voltage 150 V I F(AV) Average Rectified Forward Current 200 mA I FSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 4.0 A A T stg Storage Temperature Range -65 to +200 °C T J Operating Junction Temperature 175 °C Symbol Parameter Value Units P D Power Dissipation 500 mW RθJA Thermal Resistance, Junction to Ambient 300 °C/W Symbol Parameter Test Conditions Min Max Units V R Breakdown Voltage I R = 100 µA 150 V V F Forward Voltage I F = 1.0 mA I F = 5.0 mA I F = 10 mA I F = 50 mA IF = 100 mA IF = 200 mA 0.52 0.60 0.65 0.75 0.79 0.83 0.68 0.75 0.80 0.88 0.92 1.00 V V V V V V I R Reverse Current V R = 125 V VR = 30 V, TA = 125°C VR = 125 V, TA = 125°C VR = 125 V, TA = 150°C 1 0.3 0.5 3 nA µA µA µA C T Total Capacitance V R = 0, f = 1.0 MHz 8 pF t rr Reverse Recovery Time I F = 10 mA, VR = 3.5 V, RL = 1.0 kΩ 3 µs |
Numéro de pièce similaire - 1N3595 |
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Description similaire - 1N3595 |
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