BAS16LT1 datasheet(1/1 Pages) KISEMICONDUCTOR

No de pièce	BAS16LT1

Description	SOT-23 Plastic-Encapsulate Diodes

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Fabricant	KISEMICONDUCTOR [Kwang Myoung I.S. CO.,LTD]

Site Internet	http://www.kmis.co.kr/

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SWITCHING DIODE

FEATURES

Power dissipation

PD:

225

mW (Tamb=25

℃)

Forward Current

IF:

200

m A

Reverse Voltage

VR:

75

V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Reverse breakdown voltage

V(BR)

IR= 100µA

75

V

Reverse voltage

leakage current

IR

VR=75V

1

µA

Forward

voltage

VF

IF=1mA

IF=10mA

IF=50mA

IF=150mA

715

855

1000

1250

mV

Diode

capacitance

CD

VR=0V, f=1MHz

2

pF

Reverse recovery time

t r r

6

nS

Unit: mm

SOT-23

Marking

A6

KI SEMICONDUCTOR CO.

SOT-23 Plastic-Encapsulate Diodes

BAS16LT1

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