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STH260N6F6-2 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STH260N6F6-2 Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 14 page This is information on a product in full production. July 2012 Doc ID 018784 Rev 4 1/14 14 STH260N6F6-2 N-channel 60 V, 1.7 m Ω typ., 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet — production data Features ■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram Order code VDSS RDS(on) max ID STH260N6F6-2 60 V < 2.4 m Ω 180 A H2PAK-2 1 2 3 TAB Table 1. Device summary Order code Marking Package Packaging STH260N6F6-2 260N6F6 H2PAK-2 Tape and reel www.st.com |
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