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CSD18502KCS Fiches technique(PDF) 5 Page - Texas Instruments |
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CSD18502KCS Fiches technique(HTML) 5 Page - Texas Instruments |
5 / 9 page 0 20 40 60 80 100 120 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) G001 0.01 0.1 1 10 100 1000 5000 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 1ms 10ms 100ms 1s DC Single Pulse Typical RthetaJA =52ºC/W G001 10 100 0.01 0.1 1 TAV - Time in Avalanche (mS) TC = 25ºC TC = 125ºC G001 CSD18502KCS www.ti.com SLPS367A – AUGUST 2012 – REVISED OCTOBER 2012 TYPICAL MOSFET CHARACTERISTICS (continued) (TA = 25°C unless otherwise stated) TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING Figure 11. Maximum Safe Operating Area Figure 12. Single Pulse Unclamped Inductive Switching TEXT ADDED FOR SPACING Figure 13. Maximum Drain Current vs. Temperature Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: CSD18502KCS |
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