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TPD1E05U06 Fiches technique(PDF) 5 Page - Texas Instruments |
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TPD1E05U06 Fiches technique(HTML) 5 Page - Texas Instruments |
5 / 15 page TPD1E05U06 TPD4E05U06 TPD6E05U06 www.ti.com SLVSBO7B – DECEMBER 2012 – REVISED JANUARY 2013 ELECTRICAL CHARACTERISTICS over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VRWM Reverse stand-off voltage IIO = 10 µA 5.5 V IPP= 1 A, tp = 8/20 μs, from I/O to ground (1) 10.4 IPP= 2.5A, tp = 8/20 μs, from I/O to ground (1) 13.4 Vclamp Clamp voltage V IPP= 1A, tp = 8/20 μs, from ground to I/O (1) 3.3 IPP= 3A, tp = 8/20 μs, from ground to I/O (1) 7.6 Pin x to GND Pin(2) 0.65 DPY package dynamic Ω resistance GND Pin to Pin x (2) 0.8 Pin x to GND Pin(2) TBD DQA package dynamic RDYN Ω resistance GND Pin to Pin x (2) TBD Pin x to GND Pin(2) TBD RVZ package dynamic Ω resistance GND Pin to Pin x (2) TBD CL Line capacitance(3) VIO = 2.5 V, F = 1 MHz, I/O to GND 0.42 0.5 pF Channel to channel input GND Pin = 0 V, F = 1 GHz, VBIAS = 2.5 V, between CCROSS 0.1 0.15 pF capacitance channel pins ΔCIO-TO- Variation of channel input GND Pin = 0 V, F = 1 GHz, VBIAS = 2.5 V, 0.05 0.07 pF GND capacitance channel_x pin to gnd – channel_y pin to gnd VBR Break-down voltage IIO = 1 mA 6.5 8.5 V ILEAK Leakage current VIO = 2.5 V 1 10 nA (1) Non-repetitive current pulse 8/20us exponentially decaying waveform according to IEC61000-4-5. (2) Extraction of RDYIN using least squares fit of TLP characteristics between I = 10 A and I = 20 A. (3) Capacitance data is taken at 25°C. Copyright © 2012–2013, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: TPD1E05U06 TPD4E05U06 TPD6E05U06 |
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