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TPD1E05U06 Fiches technique(PDF) 5 Page - Texas Instruments

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No de pièce TPD1E05U06
Description  1, 4, 6 CHANNEL PROTECTION SOLUTION FOR SUPER-SPEED (UP TO 6 GBPS) INTERFACE
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Fabricant  TI [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI - Texas Instruments

TPD1E05U06 Fiches technique(HTML) 5 Page - Texas Instruments

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TPD1E05U06
TPD4E05U06
TPD6E05U06
www.ti.com
SLVSBO7B – DECEMBER 2012 – REVISED JANUARY 2013
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VRWM
Reverse stand-off voltage
IIO = 10 µA
5.5
V
IPP= 1 A, tp = 8/20 μs, from I/O to ground
(1)
10.4
IPP= 2.5A, tp = 8/20 μs, from I/O to ground
(1)
13.4
Vclamp
Clamp voltage
V
IPP= 1A, tp = 8/20 μs, from ground to I/O
(1)
3.3
IPP= 3A, tp = 8/20 μs, from ground to I/O
(1)
7.6
Pin x to GND Pin(2)
0.65
DPY package dynamic
Ω
resistance
GND Pin to Pin x (2)
0.8
Pin x to GND Pin(2)
TBD
DQA package dynamic
RDYN
Ω
resistance
GND Pin to Pin x (2)
TBD
Pin x to GND Pin(2)
TBD
RVZ package dynamic
Ω
resistance
GND Pin to Pin x (2)
TBD
CL
Line capacitance(3)
VIO = 2.5 V, F = 1 MHz, I/O to GND
0.42
0.5
pF
Channel to channel input
GND Pin = 0 V, F = 1 GHz, VBIAS = 2.5 V, between
CCROSS
0.1
0.15
pF
capacitance
channel pins
ΔCIO-TO-
Variation of channel input
GND Pin = 0 V, F = 1 GHz, VBIAS = 2.5 V,
0.05
0.07
pF
GND
capacitance
channel_x pin to gnd – channel_y pin to gnd
VBR
Break-down voltage
IIO = 1 mA
6.5
8.5
V
ILEAK
Leakage current
VIO = 2.5 V
1
10
nA
(1)
Non-repetitive current pulse 8/20us exponentially decaying waveform according to IEC61000-4-5.
(2)
Extraction of RDYIN using least squares fit of TLP characteristics between I = 10 A and I = 20 A.
(3)
Capacitance data is taken at 25°C.
Copyright © 2012–2013, Texas Instruments Incorporated
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