SBW3320

Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved

2.Collector

3.Emitter

1.Base

Symb ol

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TO-3P

Parameter

Symbol

Maximum rating

Unit

Collector-Base Voltage

VCBO

500

V

Collector-Emitter Voltage

VCEO

400

V

Emitter-Base Voltage

VEBO

7

V

Collector Current(DC)

IC

15

A

Base Current

IB

5

A

Collector Dissipation(Tc=25℃)

PC

80

W

Junction Temperature

TJ

150

℃

Storage Temperature

TSTG

-65 ~ 150

℃

Switch Mode series

NPN silicon Power Transistor

Features

◆

High voltage, high speed power switching

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Low VCE(sat)

General Description

This device is designed for high voltage, high speed switching

characteristic required such as switching regulator, inverters,

motor controls.

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Jun 2007. Rev. 0