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CSD16408Q5 Fiches technique(PDF) 1 Page - Texas Instruments |
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CSD16408Q5 Fiches technique(HTML) 1 Page - Texas Instruments |
1 / 11 page 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0094-01 VGS − Gate to Source Voltage − V 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 G006 ID = 25A TC = 125°C TC = 25°C Qg − Gate Charge − nC 0 2 4 6 8 10 12 0 5 10 15 20 G003 ID = 25A VDS = 12.5V CSD16408Q5 www.ti.com SLPS228A – OCTOBER 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET™ Power MOSFET 1 FEATURES PRODUCT SUMMARY 2 • Ultralow Qg and Qgd VDS Drain-to-source voltage 25 V • Low Thermal Resistance Qg Gate charge, total (4.5 V) 6.7 nC • Avalanche Rated Qgd Gate charge, gate-to-drain 1.9 nC • SON 5-mm × 6-mm Plastic Package VGS = 4.5 V 5.4 m Ω rDS(on) Drain-to-source on-resistance VGS = 10 V 3.6 m Ω APPLICATIONS VGS(th) Threshold voltage 1.8 V • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems ORDERING INFORMATION • Optimized for Control FET Applications Device Package Media Qty Ship SON 5-mm × 6-mm 13-inch Tape and CSD16408Q5 plastic package (33-cm) 2500 reel DESCRIPTION reel The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VALUE UNIT Top View VDS Drain-to-source voltage 25 V VGS Gate-to-source voltage –12 to 16 V Continuous drain current, TC = 25°C 113 A ID Continuous drain current(1) 22 A IDM Pulsed drain current, TA = 25°C (2) 141 A PD Power dissipation(1) 3.1 W TJ, Operating junction and storage temperature –55 to 150 °C TSTG range Avalanche energy, single-pulse EAS 126 mJ ID = 23 A, L = 0.1 mH, RG = 25 Ω (1) Typical RqJA = 41°C/W on 1-inch 2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤300 ms, duty cycle ≤2% put a break here is force notes closer to the table put a break here is force notes closer to the table rDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2009–2010, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
Numéro de pièce similaire - CSD16408Q5_11 |
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Description similaire - CSD16408Q5_11 |
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