MJ10000 datasheet(3/8 Pages) MOTOROLA

No de pièce	MJ10000

Description	20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS

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Fabricant	MOTOROLA [Motorola, Inc]

Site Internet	http://www.freescale.com

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MJ10000

3

Motorola Bipolar Power Transistor Device Data

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

5

0.2 0.3

1

2

3

100

50

Figure 2. Collector Saturation Region

3

IB, BASE CURRENT (ANP)

1

0.02 0.03

0.1

0.2

0.5

1

2

2.6

2.2

1.8

1.4

IC = 5 A

TJ = 25°C

10 A

VBE, BASE-EMITTER VOLTAGE (VOLTS)

104

103

102

101

500

70

TJ = 150°C

VCE = 5 V

100

0

+ 0.2

– 0.2

VCE = 250 V

TJ = 125°C

100

°C

25

°C

30

20

10

7

0.5 0.7

5

7

20

Figure 3. Collector Emitter Saturation Voltages

2.4

0.2

IC, COLLECTOR CURRENT (AMPS)

0.4

0.3

0.5 0.7

1

2

5

20

2

1.6

1.2

0.8

IC/IB = 25

TJ = – 55°C

7

3

Figure 4. Base-Emitter Voltage

2.8

IC, COLLECTOR CURRENT (AMP)

0.8

0.2 0.3

0.5 0.7

2.4

2

1.6

1.2

Figure 5. Collector Cutoff Region

0.4

Figure 6. Output Capacitance

VR, REVERSE VOLTAGE (VOLTS)

50

1

2

20

60

10

0.6

200

70

TJ = 25°C

Cob

1000

500

100

200

400

25

°C

– 55

°C

200

300

10

15 A

20 A

0.05

0.7

0.3

0.07

10

25

°C

150

°C

2

5

20

7

3

10

1

25

°C

150

°C

25

°C

TJ = 55°C

VBE(sat) @ IC/IB = 25

VBE(on) @ VCE = 3 V

75

°C

10–1

+ 0.4

+ 0.8

+ 0.6

4

6

40

700

300

DC CHARACTERISTICS

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Mospec Semiconductor	MJ10000	188Kb / 4P	POWER TRANSISTORS(20A,350-400V,175W)
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Motorola, Inc	MJ10007	228Kb / 8P	10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS
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