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2SA1419 Fiches technique(PDF) 1 Page - Sanyo Semicon Device

No de pièce 2SA1419
Description  High-Voltage Switching Applications
Download  7 Pages
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Fabricant  SANYO [Sanyo Semicon Device]
Site Internet  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SA1419 Fiches technique(HTML) 1 Page - Sanyo Semicon Device

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2SA1419 / 2SC3649
No.2007-1/7
Features
Adoption of FBET, MBIT processes
High breakdown voltage and large current capacity
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
Specifications ( ) : 2SA1419
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)180
V
Collector-to-Emitter Voltage
VCEO
(--)160
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)1.5
A
Collector Current (Pulse)
ICP
(--)2.5
A
Collector Dissipation
PC
500
mW
When mounted on ceramic substrate (250mm2×0.8mm)
1.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7007B-004
Ordering number : EN2007C
82212 TKIM/31010CB TKIM/O3103TN (KT)/71598HA (KT)/4277TA, TS
SANYO Semiconductors
DATA SHEET
http://www.sanyosemi.com/en/network/
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
Electrical Connection
TD
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
1.5
0.5
0.4
3.0
4.5
1.6
0.4
12
3
1.5
0.75
Top View
Bottom View
2SA1419S-TD-E
2SA1419S-TD-H
2SA1419T-TD-E
2SA1419T-TD-H
2SC3649S-TD-E
2SC3649S-TD-H
2SC3649T-TD-E
2SC3649T-TD-H
2SC3649
2SA1419
RANK
RANK
2
3
1
2SC3649
2
3
1
2SA1419
2SA1419/2SC3649
PNP / NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching
Applications


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