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FM25L16B-DG Fiches technique(PDF) 1 Page - Cypress Semiconductor

No de pièce FM25L16B-DG
Description  16Kb Serial 3V F-RAM Memory
Download  14 Pages
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Fabricant  CYPRESS [Cypress Semiconductor]
Site Internet  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM25L16B-DG Fiches technique(HTML) 1 Page - Cypress Semiconductor

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This product conforms to specifications per the terms of the Ramtron
Ramtron International Corporation
standard warranty. The product has completed Ramtron’s internal
1850 Ramtron Drive, Colorado Springs, CO 80921
qualification testing and has reached production status.
(800) 545-F-RAM, (719) 481-7000
www.ramtron.com
Rev. 3.0
Jan. 2012
Page 1 of 14
FM25L16B
16Kb Serial 3V F-RAM Memory
Features
16K bit Ferroelectric Nonvolatile RAM
Organized as 2,048 x 8 bits
High Endurance 100 Trillion (10
14) Read/Writes
38 Year Data Retention (@ +75ºC)
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 2.7-3.6V
200 A Active Current (1 MHz)
3 A (typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40C to +85C
8-pin “Green”/RoHS SOIC and TDFN Packages
Description
The FM25L16B is a 16-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system
level
reliability
problems
caused
by
EEPROM and other nonvolatile memories.
The FM25L16B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after each byte has
been transferred to the device. The next bus cycle
may commence without the need for data polling.
The FM25L16B is capable of supporting 10
14
read/write cycles, or a million times more write
cycles than EEPROM.
These capabilities make the FM25L16B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25L16B provides substantial benefits to users
of
serial
EEPROM
as
a
hardware
drop-in
replacement. The FM25L16B uses the high-speed
SPI bus, which enhances the high-speed write
capability
of
F-RAM
technology.
Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
Pin Configuration
Pin Name
Function
/CS
Chip Select
/WP
Write Protect
/HOLD
Hold
SCK
Serial Clock
SI
Serial Data Input
SO
Serial Data Output
VDD
Supply Voltage
VSS
Ground
Ordering Information
FM25L16B-G
“Green”/RoHS 8-pin SOIC
FM25L16B-GTR
“Green”/RoHS 8-pin SOIC,
Tape & Reel
FM25L16B-DG
“Green”/RoHS 8-pin TDFN
FM25L16B-DGTR
“Green”/RoHS 8-pin TDFN,
Tape & Reel
/CS
SO
/WP
VSS
VDD
/HOLD
SCK
SI
8
7
6
5
1
2
3
4
Top View
CS
SO
WP
VSS
VDD
HOLD
SCK
SI
1
2
3
4
8
7
6
5


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