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FM25C160B-GTR Fiches technique(PDF) 9 Page - Cypress Semiconductor |
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FM25C160B-GTR Fiches technique(HTML) 9 Page - Cypress Semiconductor |
9 / 13 page FM25C160B - 16Kb 5V SPI F-RAM Rev. 3.0 Jan. 2012 Page 9 of 13 Electrical Specifications Absolute Maximum Ratings Symbol Description Ratings VDD Power Supply Voltage with respect to VSS -1.0V to +7.0V VIN Voltage on any pin with respect to VSS -1.0V to +7.0V and VIN < VDD+1.0V TSTG Storage Temperature -55C to + 125C TLEAD Lead Temperature (Soldering, 10 seconds) 260 C VESD Electrostatic Discharge Voltage - Human Body Model (AEC-Q100-002 Rev. E) - Charged Device Model (AEC-Q100-011 Rev. B) - Machine Model (AEC-Q100-003 Rev. E) 4kV 1.25kV 300V Package Moisture Sensitivity Level MSL-1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and the functional operation of the device at these or any other conditions above those listed in the operational section of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. DC Operating Conditions (TA = -40 C to + 85 C, VDD = 4.5V to 5.5V unless otherwise specified) Symbol Parameter Min Typ Max Units Notes VDD Power Supply Voltage 4.5 5.0 5.5 V IDD VDD Supply Current @ SCK = 1.0 MHz @ SCK = 20.0 MHz 0.25 4.0 mA mA 1 ISB Standby Current 4 10 A 2 ILI Input Leakage Current 1 A 3 ILO Output Leakage Current 1 A 3 VIL Input Low Voltage -0.3 0.3 VDD V VIH Input High Voltage 0.7 VDD VDD + 0.3 V VOL Output Low Voltage @ IOL = 2 mA 0.4 V VOH Output High Voltage @ IOH = -2 mA VDD – 0.8 V VHYS Input Hysteresis 0.05 VDD V 4 Notes 1. SCK toggling between VDD-0.3V and VSS, other inputs VSS or VDD-0.3V. 2. SCK = SI = /CS=VDD. All inputs VSS or VDD. 3. VIN or VOUT = VSS to VDD. 4. This parameter is characterized but not 100% tested. |
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Description similaire - FM25C160B-GTR |
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