TIP110 datasheet(2/3 Pages) COMSET

No de pièce	TIP110

Description	SILICON DARLINGTON POWER TRANSISTORS

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Fabricant	COMSET [Comset Semiconductor]

Site Internet	http://comset.halfin.com

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2 / 3 page

NPN TIP110-111-112

05/10/2012

COMSET SEMICONDUCTORS

2 |3

SEMICONDUCTORS

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJ-case

From junction-case

TIP110

2.5

°C/W

TIP111

TIP112

RthJ-amb

From junction-ambient

TIP110

62.5

°C/W

TIP111

TIP112

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector Cutoff Current

IE= 0,VCB = VCBOmax

TIP110

-

1

mA

TIP111

TIP112

ICEO

Collector Cutoff Current

IE= 0, VCE = 1/2

VCEOmax

TIP110

-

2

mA

TIP111

TIP112

IEBO

Emitter Cutoff Current

VEB= 5 V, IC= 0

TIP110

-

2

mA

TIP111

TIP112

VCEO

Collector-Emitter

Breakdown Voltage (*)

IC= 30 mA, IB= 0

TIP110

60

-

V

TIP111

80

-

TIP112

100

-

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= 2 A, IB= 8 mA

TIP110

-

2.5

V

TIP111

TIP112

VBE(on)

Base-Emitter Voltage

(*)

IC= 2 A, VCE= 4 V

TIP110

-

2.8

V

TIP111

TIP112

hFE

DC Current Gain (*)

VCE= 4 V, IC= 1 A

TIP110

1000

-

TIP111

TIP112

VCE= 4 V, IC= 2 A

TIP110

500

-

TIP111

TIP112

COB

Output Capacitance

IE= 0, VCB = 10 V

f= 0.1MHz

TIP110

-

100

pF

TIP111

TIP112

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 2.0%

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Mospec Semiconductor	TIP110	146Kb / 3P	POWER TRANSISTORS(2.0A,60-100V,50W)
Rectron Semiconductor	TIP110	76Kb / 3P	TO-220 - Power Transistors and Darlingtons
Motorola, Inc	TIP110	269Kb / 6P	DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
Micro Commercial Compon...	TIP110	149Kb / 2P	Silicon NPN Darlington Power Transistor
ON Semiconductor	TIP110	269Kb / 6P	Plastic Medium-Power Complementary Silicon Transistors REV 1

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