SIZ702DT datasheet(3/14 Pages) VISHAY

No de pièce	SIZ702DT

Description	N-Channel 30 V (D-S) MOSFETs

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Fabricant	VISHAY [Vishay Siliconix]

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Document Number: 65525

S11-2379-Rev. B, 28-Nov-11

www.vishay.com

3

Vishay Siliconix

SiZ702DT

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

 300 µs, duty cycle  2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Dynamica

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 1.5 

ID  10 A, VGEN = 4.5 V, Rg = 1 

Ch-1

Ch-2

15

25

ns

Rise Time

tr

Ch-1

Ch-2

12

20

Turn-Off Delay Time

td(off)

Ch-1

Ch-2

20

30

Fall Time

tf

Ch-1

Ch-2

10

15

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 1.5 

ID  10 A, VGEN = 10 V, Rg = 1 

Ch-1

Ch-2

10

15

Rise Time

tr

Ch-1

Ch-2

12

20

Turn-Off Delay Time

td(off)

Ch-1

Ch-2

20

30

Fall Time

tf

Ch-1

Ch-2

10

15

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

Ch-1

Ch-2

16

A

Pulse Diode Forward Currenta

ISM

Ch-1

Ch-2

50

Body Diode Voltage

VSD

IS = 10 A, VGS = 0 V

Ch-1

Ch-2

0.8

1.2

V

Body Diode Reverse Recovery Time

trr

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

Ch-1

Ch-2

20

40

ns

Body Diode Reverse Recovery Charge

Qrr

Ch-1

Ch-2

10

20

nC

Reverse Recovery Fall Time

ta

Ch-1

Ch-2

11

ns

Reverse Recovery Rise Time

tb

Ch-1

Ch-2

9

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