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FSB50325AT Fiches technique(PDF) 4 Page - Fairchild Semiconductor

No de pièce FSB50325AT
Description  Smart Power Module (SPM짰)
Download  10 Pages
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Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FSB50325AT Fiches technique(HTML) 4 Page - Fairchild Semiconductor

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FSB50325AT Rev. A
Electrical Characteristics (T
J = 25°C, VCC=VBS=15V Unless Otherwise Specified)
Inverter Part (Each FRFET Unless Otherwise Specified)
Control Part (Each HVIC Unless Otherwise Specified)
Bootstrap Diode Part (Each Bootstrap diode Unless Otherwise Specified)
Note:
1. BVDSS is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM
®. V
PN should be sufficiently less than this value considering the
effect of the stray inductance so that VDS should not exceed BVDSS in any case.
2. tON and tOFF include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the
field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7.
3. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 7 for the RBSOA test cir-
cuit that is same as the switching test circuit.
4. Vts is only for sensing temperature of module and cannot shutdown MOSFETs automatically.
5. Built in bootstrap diode includes around 15 Ω resistance characteristic. Please refer to Figure 2.
Symbol
Parameter
Conditions
Min
Typ Max
Units
BVDSS
Drain-Source Breakdown
Voltage
VIN= 0V, ID = 1mA (Note 1)
250
-
-
V
IDSS
Zero Gate Voltage
Drain Current
VIN= 0V, VDS = 250V
-
-
1
mA
RDS(on)
Static Drain-Source
On-Resistance
VCC = VBS = 15V, VIN = 5V, ID = 1.0A
-
1.1
1.7
W
VSD
Drain-Source Diode
Forward Voltage
VCC = VBS = 15V, VIN = 0V, ID = -1.0A
-
-
1.2
V
tON
Switching Times
VPN = 150V, VCC = VBS = 15V, ID = 1.0A
VIN = 0V « 5V, Inductive load L=3mH
High- and low-side FRFET switching
(Note 2)
-
560
-
ns
tOFF
-
350
-
ns
trr
-
140
-
ns
EON
-
40
-
mJ
EOFF
-
10
-
mJ
RBSOA
Reverse-bias Safe Oper-
ating Area
VPN = 200V, VCC = VBS = 15V, ID = IDP, VDS=BVDSS,
TJ = 150°C
High- and low-side FRFET switching (Note 3)
Full Square
Symbol
Parameter
Conditions
Min
Typ Max
Units
IQCC
Quiescent VCC Current
VCC=15V, VIN=0V Applied between VCC and COM
-
-
200
mA
IQBS
Quiescent VBS Current
VBS=15V, VIN=0V
Applied between VB(U)-U,
VB(V)-V, VB(W)-W
-
-
100
mA
UVCCD
Low-side Undervoltage
Protection (Figure 8)
VCC Undervoltage Protection Detection Level
7.4
8.0
9.4
V
UVCCR
VCC Undervoltage Protection Reset Level
8.0
8.9
9.8
V
UVBSD
High-side Undervoltage
Protection (Figure 9)
VBS Undervoltage Protection Detection Level
7.4
8.0
9.4
V
UVBSR
VBS Undervoltage Protection Reset Level
8.0
8.9
9.8
V
Vts
HVIC Temperature sens-
ing voltage output
VCC=15V, THVIC=25°C(Note 4)
600
790
980
mV
VIH
ON Threshold Voltage
Logic High Level
Applied between IN and COM
2.9
-
-
V
VIL
OFF Threshold Voltage
Logic Low Level
-
-
0.8
V
Symbol
Parameter
Conditions
Min
Typ Max
Units
VFB
Forward Voltage
IF = 0.1A, TC = 25°C(Note 5)
-
2.5
-
V
trrB
Reverse Recovery Time
IF = 0.1A, TC = 25°C
-
80
-
ns


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