FDS6692A_10 datasheet(3/7 Pages) FAIRCHILD

No de pièce	FDS6692A

Description	N-Channel PowerTrench짰 MOSFET 30V, 9A, 11.5m廓

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

Site Internet	http://www.fairchildsemi.com

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FDS6692A Rev. A

2

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Switching Characteristics (VGS = 10V)

Drain-Source Diode Characteristics

Notes:

1: Starting TJ = 25°C, L = 0.3mH, IAS = 23A, VDD = 27V, VGS = 10V.

2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder

mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.

3: RθJA is measured with 1.0 in2 copper on FR-4 board

tON

Turn-On Time

VDD = 15V, ID = 9A

VGS = 10V, RGS = 6.2Ω

-

60

ns

td(ON)

Turn-On Delay Time

-

8

-

ns

tr

Rise Time

-

32

-

ns

td(OFF)

Turn-Off Delay Time

-

33

-

ns

tf

Fall Time

-

13

-

ns

tOFF

Turn-Off Time

-

69

ns

VSD

Source to Drain Diode Voltage

ISD = 9A

-

1.25

V

ISD = 2.1A

-

1.0

V

trr

Reverse Recovery Time

ISD = 9A, dISD/dt=100A/µs-

-

27

ns

QRR

Reverse Recovered Charge

ISD = 9A, dISD/dt=100A/µs-

-

17

nC

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