Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

FDD86540 Fiches technique(PDF) 2 Page - Fairchild Semiconductor

No de pièce FDD86540
Description  N-Channel PowerTrench짰 MOSFET 60 V, 50 A, 4.1 m廓
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  FAIRCHILD [Fairchild Semiconductor]
Site Internet  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD86540 Fiches technique(HTML) 2 Page - Fairchild Semiconductor

  FDD86540 Datasheet HTML 1Page - Fairchild Semiconductor FDD86540 Datasheet HTML 2Page - Fairchild Semiconductor FDD86540 Datasheet HTML 3Page - Fairchild Semiconductor FDD86540 Datasheet HTML 4Page - Fairchild Semiconductor FDD86540 Datasheet HTML 5Page - Fairchild Semiconductor FDD86540 Datasheet HTML 6Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
www.fairchildsemi.com
2
©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. C
Electrical Characteristics T
J = 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
60
V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
28
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 48 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA2
3.1
4
V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-11
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 21.5 A
3.4
4.1
m
Ω
VGS = 8 V, ID = 19.5 A
4.1
5
VGS = 10 V, ID = 21.5 A, TJ = 125 °C
5.2
6.3
gFS
Forward Transconductance
VDS = 10 V, ID = 21.5 A
75
S
Ciss
Input Capacitance
VDS = 30 V, VGS = 0 V,
f = 1 MHz
4767
6340
pF
Coss
Output Capacitance
1409
1880
pF
Crss
Reverse Transfer Capacitance
48
90
pF
Rg
Gate Resistance
0.6
Ω
td(on)
Turn-On Delay Time
VDD = 30 V, ID = 21.5 A,
VGS = 10 V, RGEN = 6 Ω
26
42
ns
tr
Rise Time
15
28
ns
td(off)
Turn-Off Delay Time
31
49
ns
tf
Fall Time
6.9
14
ns
Qg
Total Gate Charge
VGS = 0 V to 10 V
VDD = 30 V,
ID = 21.5 A
65
90
nC
Qg
Total Gate Charge
VGS = 0 V to 8 V
54
75
nC
Qgs
Gate to Source Charge
23
nC
Qgd
Gate to Drain “Miller” Charge
12
nC
VSD
Source-Drain Diode Forward Voltage
VGS = 0 V, IS = 21.5 A
(Note 2)
0.8
1.3
V
VGS = 0 V, IS = 2.6 A
(Note 2)
0.7
1.2
V
trr
Reverse Recovery Time
IF = 21.5 A, di/dt = 100 A/μs
56
90
ns
Qrr
Reverse Recovery Charge
43
69
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
2: Pulse Test: Pulse Width < 300
μs, Duty cycle < 2.0%.
3: Starting TJ = 25 °C, L = 0.3 mH, IAS = 39 A, VDD = 54 V, VGS = 10 V.
40 °C/W when mounted on a
1 in2 pad of 2 oz copper
a)
96 °C/W when mounted on
a minimum pad
b)


Numéro de pièce similaire - FDD86540

FabricantNo de pièceFiches techniqueDescription
logo
Inchange Semiconductor ...
FDD86540 ISC-FDD86540 Datasheet
353Kb / 2P
   isc N-Channel MOSFET Transistor
More results

Description similaire - FDD86540

FabricantNo de pièceFiches techniqueDescription
logo
Fairchild Semiconductor
FDMS86540 FAIRCHILD-FDMS86540 Datasheet
274Kb / 7P
   N-Channel PowerTrench짰 MOSFET 60 V, 50 A, 3.4 m廓
FDMQ86530L FAIRCHILD-FDMQ86530L Datasheet
261Kb / 6P
   N-Channel PowerTrench짰 MOSFET 60 V, 8 A, 17.5 m廓
FDMS86520 FAIRCHILD-FDMS86520 Datasheet
258Kb / 7P
   N-Channel PowerTrench짰 MOSFET 60 V, 42 A, 7.4 m廓
logo
ON Semiconductor
FDMS86568-F085 ONSEMI-FDMS86568-F085 Datasheet
487Kb / 6P
   N-Channel PowerTrench짰 MOSFET 60 V, 80 A, 3.5 m廓
August-2017, Rev 3
logo
Fairchild Semiconductor
FDS86540 FAIRCHILD-FDS86540 Datasheet
262Kb / 6P
   N-Channel PowerTrench짰 MOSFET 60 V, 18 A, 4.5 m廓
FDMS86150 FAIRCHILD-FDMS86150 Datasheet
324Kb / 7P
   N-Channel PowerTrench짰 MOSFET 100 V, 60 A, 4.85 m廓
FDMS86500L FAIRCHILD-FDMS86500L Datasheet
283Kb / 7P
   N-Channel PowerTrench짰 MOSFET 60 V, 80 A, 2.5 m廓
logo
ON Semiconductor
FDBL86566-F085 ONSEMI-FDBL86566-F085 Datasheet
505Kb / 7P
   N-Channel PowerTrench짰 MOSFET 60 V, 240 A, 2.4 m廓
August-2017, Rev. 2
logo
Fairchild Semiconductor
FDMS86520L FAIRCHILD-FDMS86520L Datasheet
269Kb / 7P
   N-Channel PowerTrench짰 MOSFET 60 V, 22 A, 8.2 m廓
FDMS86101 FAIRCHILD-FDMS86101_12 Datasheet
294Kb / 7P
   N-Channel PowerTrench짰 MOSFET 100 V, 60 A, 8 m廓
More results


Html Pages

1 2 3 4 5 6


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com