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FDD86540 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDD86540 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page www.fairchildsemi.com 2 ©2012 Fairchild Semiconductor Corporation FDD86540 Rev. C Electrical Characteristics T J = 25 °C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 60 V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C 28 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA2 3.1 4 V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -11 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 21.5 A 3.4 4.1 m Ω VGS = 8 V, ID = 19.5 A 4.1 5 VGS = 10 V, ID = 21.5 A, TJ = 125 °C 5.2 6.3 gFS Forward Transconductance VDS = 10 V, ID = 21.5 A 75 S Ciss Input Capacitance VDS = 30 V, VGS = 0 V, f = 1 MHz 4767 6340 pF Coss Output Capacitance 1409 1880 pF Crss Reverse Transfer Capacitance 48 90 pF Rg Gate Resistance 0.6 Ω td(on) Turn-On Delay Time VDD = 30 V, ID = 21.5 A, VGS = 10 V, RGEN = 6 Ω 26 42 ns tr Rise Time 15 28 ns td(off) Turn-Off Delay Time 31 49 ns tf Fall Time 6.9 14 ns Qg Total Gate Charge VGS = 0 V to 10 V VDD = 30 V, ID = 21.5 A 65 90 nC Qg Total Gate Charge VGS = 0 V to 8 V 54 75 nC Qgs Gate to Source Charge 23 nC Qgd Gate to Drain “Miller” Charge 12 nC VSD Source-Drain Diode Forward Voltage VGS = 0 V, IS = 21.5 A (Note 2) 0.8 1.3 V VGS = 0 V, IS = 2.6 A (Note 2) 0.7 1.2 V trr Reverse Recovery Time IF = 21.5 A, di/dt = 100 A/μs 56 90 ns Qrr Reverse Recovery Charge 43 69 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. 2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3: Starting TJ = 25 °C, L = 0.3 mH, IAS = 39 A, VDD = 54 V, VGS = 10 V. 40 °C/W when mounted on a 1 in2 pad of 2 oz copper a) 96 °C/W when mounted on a minimum pad b) |
Numéro de pièce similaire - FDD86540 |
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Description similaire - FDD86540 |
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