DMG7430LFG datasheet(6/7 Pages) DIODES

No de pièce	DMG7430LFG

Description	This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Download	7 Pages

Scroll/Zoom	100%

Fabricant	DIODES [Diodes Incorporated]

Site Internet	http://www.diodes.com

Logo

6 / 7 page

DMG7430LFG

Document number: DS35497 Rev. 5 - 2

6 of 7

www.diodes.com

February 2012

DMG7430LFG

POWERDI is a registered trademark of Diodes Incorporated

Package Outline Dimensions

Suggested Pad Layout

POWERDI

®3333-8

Dim

Min

Max

Typ

D

3.25

3.35

3.30

E

3.25

3.35

3.30

D2

2.22

2.32

2.27

E2

1.56

1.66

1.61

A

0.75

0.85

0.80

A1

0

0.05

0.02

A3

−

0.203

b

0.27

0.37

0.32

b2

−

0.20

L

0.35

0.45

0.40

L1

−

0.39

e

−

0.65

Z

−

0.515

All Dimensions in mm

Dimensions

Value (in mm)

C

0.650

G

0.230

G1

0.420

Y

3.700

Y1

2.250

Y2

1.850

Y3

0.700

X

2.370

X2

0.420

A

A1

A3

D

D2

E

E2

b2

(4x)

L

(4x)

L1

(3x)

b (8x)

e

Z (4x)

Pin 1 ID

14

85

X

Y

Y1

Y3

Y2

X2

C

14

85

G

G1

Numéro de pièce similaire - DMG7430LFG

Fabricant	No de pièce	Fiches technique	Description
Diodes Incorporated	DMG7430LFG-13	223Kb / 7P	N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰
	DMG7430LFG-7	223Kb / 7P	N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰
	DMG7430LFGQ	428Kb / 7P	N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 July 2021 Rev. 2 - 2
	DMG7430LFGQ-13	428Kb / 7P	N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 July 2021 Rev. 2 - 2
	DMG7430LFGQ-7	428Kb / 7P	N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 July 2021 Rev. 2 - 2

More results

Description similaire - DMG7430LFG

Fabricant	No de pièce	Fiches technique	Description
Diodes Incorporated	DMG4406LSS	232Kb / 6P	This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Diodes Incorporated	DMG4511SK4	202Kb / 10P	This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Texas Instruments	CSD16408Q5C	340Kb / 11P	[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
	CSD18503Q5A	730Kb / 12P	[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
	CSD18531Q5A	1Mb / 12P	[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
	CSD16408Q5	323Kb / 11P	[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
	CSD18504Q5A	745Kb / 12P	[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
	CSD16407Q5C	345Kb / 11P	[Old version datasheet] ID The NexFET??power MOSFET has been designed to minimize losses in power conversion applications.
	CSD17302Q5A	521Kb / 11P	[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
	CSD17304Q3	532Kb / 11P	[Old version datasheet] The NexFET power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.

More results

DMG7430LFG Fiches technique(PDF) 6 Page - Diodes Incorporated

DMG7430LFG Fiches technique(HTML) 6 Page - Diodes Incorporated

Numéro de pièce similaire - DMG7430LFG

Description similaire - DMG7430LFG

Html Pages

1 2 3 4 5 6 7

Fiches technique Télécharger

Lien URL