74AUP1G125SE datasheet(8/13 Pages) DIODES

No de pièce	74AUP1G125SE

Description	SINGLE BUFFER GATE WITH 3-STATE OUTPUT

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Fabricant	DIODES [Diodes Incorporated]

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8 / 13 page

74AUP1G125

Document number: DS35157 Rev. 1 - 2

8 of 13

www.diodes.com

August 2012

74AUP1G125

Operating and Package Characteristics (@TA = +25°C, unless otherwise specified.)

Parameter

Test Conditions

VCC

Typ

Unit

Cpd

Power Dissipation

Capacitance

f = 1MHz

No Load

0.8V

6.9

pF

1.2V ± 0.1V

6.7

1.5V ± 0.1V

6.6

1.8V ± 0.15V

6.5

2.5V ± 0.2V

6.4

3.3V ± 0.3V

6.3

Ci

Input Capacitance

Vi = VCC or GND

0 or 3.3V

1.5

pF

θJA

Thermal Resistance

Junction-to-Ambient

SOT353

(Note 6)

371

°C/W

X2-DFN1410-6

430

X2-DFN1010-6

445

θJC

Thermal Resistance

Junction-to-Case

SOT353

(Note 6

143

°C/W

X2-DFN1410-6

190

X2-DFN1010-6

250

Note:

6. Test condition for SOT353, DFN1410, and DFN1010 devices mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad

layout.

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