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CXK581000ATM-55SL Fiches technique(PDF) 7 Page - Sony Corporation |
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CXK581000ATM-55SL Fiches technique(HTML) 7 Page - Sony Corporation |
7 / 12 page – 7 – CXK581000ATM/AYM/AM/AP • Write cycle (2) : CE1 control • Write cycle (3) : CE2 control ∗1 Write is executed when both CE1 and WE are at low and CE2 is at high simultaneously. ∗2 Do not apply the data input voltage of the opposite phase to the output while the I/O pin is in output condition. ∗3 t WR1 is tested from either the rising edge of CE1 or the falling edge of CE2, whichever comes earlier, until the end of the write cycle. tWC tOW tAW tWP tAS tDH tDW Data valid High impedance Address OE CE1 CE2 WE Data in Data out tCW tAS tCW tWR1 (∗3) tWC tCW tAW tCW tWP tAS tDH tDW tWR1 Data valid High impedance Address OE CE1 CE2 WE Data in Data out (∗3) |
Numéro de pièce similaire - CXK581000ATM-55SL |
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Description similaire - CXK581000ATM-55SL |
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