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CXK581000ATM-55SL Fiches technique(PDF) 7 Page - Sony Corporation

No de pièce CXK581000ATM-55SL
Description  131072-word x 8-bit High Speed CMOS Static RAM
Download  12 Pages
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Fabricant  SONY [Sony Corporation]
Site Internet  http://www.sony.co.jp
Logo SONY - Sony Corporation

CXK581000ATM-55SL Fiches technique(HTML) 7 Page - Sony Corporation

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CXK581000ATM/AYM/AM/AP
• Write cycle (2) : CE1 control
• Write cycle (3) : CE2 control
∗1 Write is executed when both CE1 and WE are at low and CE2 is at high simultaneously.
∗2 Do not apply the data input voltage of the opposite phase to the output while the I/O pin is in output condition.
∗3 t
WR1
is tested from either the rising edge of CE1 or the falling edge of CE2, whichever comes earlier, until
the end of the write cycle.
tWC
tOW
tAW
tWP
tAS
tDH
tDW
Data valid
High impedance
Address
OE
CE1
CE2
WE
Data in
Data out
tCW
tAS
tCW
tWR1 (∗3)
tWC
tCW
tAW
tCW
tWP
tAS
tDH
tDW
tWR1
Data valid
High impedance
Address
OE
CE1
CE2
WE
Data in
Data out
(∗3)


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