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STP6621 Fiches technique(PDF) 1 Page - Stanson Technology

No de pièce STP6621
Description  STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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Fabricant  STANSON [Stanson Technology]
Site Internet  http://www.stansontech.com
Logo STANSON - Stanson Technology

STP6621 Fiches technique(HTML) 1 Page - Stanson Technology

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STP6621
P Channel Enhancement Mode MOSFET
-18.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
.
STP6621 2010. V1
SCRIPTION
STP6621 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, noteook power management ane ther
battery powered circuits where high-side witching.
PIN CONFIGURATION
SOP-8
PART MARKING
SOP-8
FEATURE
-60V/-10.0A, RDS(ON) = 23m
(Typ.)
@VGS =-10V
-60V/-8.0A, RDS(ON) = 28m
@VGS = -4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design


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