STP4925 datasheet(2/6 Pages) STANSON

No de pièce	STP4925

Description	STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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Fabricant	STANSON [Stanson Technology]

Site Internet	http://www.stansontech.com

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STP4925

P Dual Channel Enhancement Mode

MOSFET

-

7.2A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP4925 2007. V1

ABSOULTE MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

VDSS

-30

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

(TJ=150℃)

TA=25℃

TA=70℃

ID

-7.2

-5.6

A

Pulsed Drain Current

IDM

-20

A

Continuous Source Current

(Diode Conduction)

IS

-2.3

A

Power Dissipation

TA=25℃

TA=70℃

PD

2.8

1.8

W

Operation Junction Temperature

TJ

-55/150

℃

Storgae Temperature Range

TSTG

-55/150

℃

Thermal Resistance-Junction to Ambient

RθJA

70

℃/W

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