2SK2394-7-TB-E datasheet(2/6 Pages) SANYO

No de pièce	2SK2394-7-TB-E

Description	N-Channel Junction Silicon FET Low-Noise HF Amplifi er Applications

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Fabricant	SANYO [Sanyo Semicon Device]

Site Internet	https://www.sanyo-av.com/us/

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2 / 6 page

2SK2394

No.4839-2/6

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Gate-to-Drain Breakdown Voltage

V(BR)GDS

IG=--10μA, VDS=0V

--15

V

Gate Cutoff Current

IGSS

VGS=--10V, VDS=0V

--1.0

nA

Cutoff Voltage

VGS(off)

VDS=5V, ID=100μA

--0.3

--0.7

--1.5

V

Drain Current

IDSS

VDS=5V, VGS=0V

6.0*

32.0*

mA

Forward Transfer Admittance

| yfs |

VDS=5V, VGS=0V, f=1kHz

20

38

mS

Input Capacitance

Ciss

VDS=5V, VGS=0V, f=1MHz

10.0

pF

Reverse Transfer Capacitance

Crss

2.9

pF

Noise Figure

NF

VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz

1.0

dB

* : The 2SK2394 is classiﬁed by IDSS as follows : (unit : mA)

Rank

5

6

7

IDSS

6.0 to 12.0

10.0 to 20.0

16.0 to 32.0

Ordering Information

Device

Package

Shipping

memo

2SK2394-6-TB-E

CP

3,000pcs./reel

Pb Free

2SK2394-7-TB-E

CP

3,000pcs./reel

ID -- VGS

ID -- VDS

Drain-to-Source Voltage, VDS -- V

Gate-to-Source Voltage, VGS -- V

ITR02751

ITR02752

0

20

16

12

8

4

0.4

0.8

1.2

1.6

2.0

2.4

ITR02749

--0.1V

VGS=0V

--0.2V

--0.3V

--0.4V

--0.5V

--0.6V

--0.7V

0

20

16

12

8

4

24

68

10

12

--0.1V

VGS=0V

--0.2V

--0.3V

--0.4V

--0.5V

--0.6V

--0.7V

ITR02750

--1.4

--1.2

--1.0

--0.8

--0.6

--0.4

--0.2

0

0.2

0

22

20

18

16

14

12

10

8

6

4

2

--1.2

--1.0

--0.8

--0.6

--0.4

--0.2

0

0.2

0

4

2

6

8

12

10

14

16

VDS=5V

IDSS=15mA

VDS=5V

Numéro de pièce similaire - 2SK2394-7-TB-E

Fabricant	No de pièce	Fiches technique	Description
ON Semiconductor	2SK2394-7-TB-E	294Kb / 6P	N-Channel JFET August, 2013

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2SK2394-7-TB-E Fiches technique(PDF) 2 Page - Sanyo Semicon Device

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