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TPIC2401 Fiches technique(PDF) 2 Page - Texas Instruments

No de pièce TPIC2401
Description  4-CHANNEL COMMON-SOURCE POWER DMOS ARRAY
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

TPIC2401 Fiches technique(HTML) 2 Page - Texas Instruments

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TPIC2401
4CHANNEL COMMONSOURCE POWER DMOS ARRAY
SLIS049 − NOVEMBER 1996
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251−1443
absolute maximum ratings over operating case temperature range (unless otherwise noted)
Drain-to-source voltage, VDS
60 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-to-source voltage, VGS
−9 V to 18 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous drain current, each output, all outputs on, TC = 25°C
1.5 A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed drain current, each output, IOmax, TC = 25°C (see Note 1 and Figure 7)
6 A
. . . . . . . . . . . . . . . . . . . .
Continuous gate-to-source zener diode current, TC = 25°C
±25 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed gate-to-source zener diode current, TC = 25°C
±250 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single-pulse avalanche energy, EAS, TC = 25°C (see Figures 4 and 6)
36 mJ
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation at (or below) TA = 25°C
1.7 W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power dissipation at (or below) TC = 75°C, all outputs on
15 W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating virtual junction temperature range, TJ
−40
°C to 150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating case temperature range, TC
−40
°C to 125°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg
−40
°C to 125°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: Pulse duration = 10 ms, duty cycle = 2%
electrical characteristics, TC = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSX
Drain-to-source breakdown voltage
ID = 250 µA,
VGS = 0
60
V
VGS(th)
Gate-to-source threshold voltage
ID = 1 mA,
VDS = VGS,
1.5
2.05
2.2
V
VGS(th)match Gate-to-source threshold voltage matching
ID = 1 mA,
See Figure 5
VDS = VGS,
5
40
V
V(BR)GS
Gate-to-source breakdown voltage
IGS = 250
µA
18
V
V(BR)SG
Source-to-gate breakdown voltage
ISG = 250 µA
9
V
VDS(on)
Drain-to-source on-state voltage
ID = 1.5A,
See Notes 2 and 3
VGS = 10 V,
0.45
0.54
V
VF(SD)
Forward on-state voltage, source-to-drain
IS = 1.5A,
VGS = 0 V,
See Notes 2 and 3 and Figure 12
0.85
1
V
IDSS
Zero-gate-voltage drain current
VDS = 48 V,
TC = 25°C
0.05
1
A
IDSS
Zero-gate-voltage drain current
VDS = 48 V,
VGS = 0
TC = 125°C
0.5
10
µA
IGSSF
Forward gate current, drain short circuited to
source
VGS = 15 V,
VDS = 0
20
200
nA
IGSSR
Reverse gate current, drain short circuited to
source
VSG = 5 V,
VDS = 0
10
100
nA
rDS(on)
Static drain-to-source on-state resistance
VGS = 10 V,
ID =1.5 A,
TC = 25°C
0.3
0.36
rDS(on)
Static drain-to-source on-state resistance
ID =1.5 A,
See Notes 2 and 3
and Figures 6 and 7
TC = 125°C
0.48
0.6
gfs
Forward transconductance
VDS = 15 V,
ID = 1 A,
See Notes 2 and 3 and Figure 9
0.9
1.15
S
Ciss
Short-circuit input capacitance, common source
180
225
Coss
Short-circuit output capacitance, common
source
VDS = 25 V,
f = 1 MHz,
VGS = 0,
See Figure 11
100
138
pF
Crss
Short-circuit reverse transfer capacitance,
common source
f = 1 MHz,
See Figure 11
75
100
pF
NOTES:
2. Technique should limit TJ − TC to 10°C maximum.
3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.


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