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TPIC2401 Fiches technique(PDF) 2 Page - Texas Instruments |
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TPIC2401 Fiches technique(HTML) 2 Page - Texas Instruments |
2 / 10 page TPIC2401 4CHANNEL COMMONSOURCE POWER DMOS ARRAY SLIS049 − NOVEMBER 1996 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 absolute maximum ratings over operating case temperature range (unless otherwise noted)† Drain-to-source voltage, VDS 60 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-to-source voltage, VGS −9 V to 18 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous drain current, each output, all outputs on, TC = 25°C 1.5 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed drain current, each output, IOmax, TC = 25°C (see Note 1 and Figure 7) 6 A . . . . . . . . . . . . . . . . . . . . Continuous gate-to-source zener diode current, TC = 25°C ±25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed gate-to-source zener diode current, TC = 25°C ±250 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single-pulse avalanche energy, EAS, TC = 25°C (see Figures 4 and 6) 36 mJ . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total power dissipation at (or below) TA = 25°C 1.7 W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power dissipation at (or below) TC = 75°C, all outputs on 15 W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating virtual junction temperature range, TJ −40 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating case temperature range, TC −40 °C to 125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, Tstg −40 °C to 125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: Pulse duration = 10 ms, duty cycle = 2% electrical characteristics, TC = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT V(BR)DSX Drain-to-source breakdown voltage ID = 250 µA, VGS = 0 60 V VGS(th) Gate-to-source threshold voltage ID = 1 mA, VDS = VGS, 1.5 2.05 2.2 V VGS(th)match Gate-to-source threshold voltage matching ID = 1 mA, See Figure 5 VDS = VGS, 5 40 V V(BR)GS Gate-to-source breakdown voltage IGS = 250 µA 18 V V(BR)SG Source-to-gate breakdown voltage ISG = 250 µA 9 V VDS(on) Drain-to-source on-state voltage ID = 1.5A, See Notes 2 and 3 VGS = 10 V, 0.45 0.54 V VF(SD) Forward on-state voltage, source-to-drain IS = 1.5A, VGS = 0 V, See Notes 2 and 3 and Figure 12 0.85 1 V IDSS Zero-gate-voltage drain current VDS = 48 V, TC = 25°C 0.05 1 A IDSS Zero-gate-voltage drain current VDS = 48 V, VGS = 0 TC = 125°C 0.5 10 µA IGSSF Forward gate current, drain short circuited to source VGS = 15 V, VDS = 0 20 200 nA IGSSR Reverse gate current, drain short circuited to source VSG = 5 V, VDS = 0 10 100 nA rDS(on) Static drain-to-source on-state resistance VGS = 10 V, ID =1.5 A, TC = 25°C 0.3 0.36 Ω rDS(on) Static drain-to-source on-state resistance ID =1.5 A, See Notes 2 and 3 and Figures 6 and 7 TC = 125°C 0.48 0.6 Ω gfs Forward transconductance VDS = 15 V, ID = 1 A, See Notes 2 and 3 and Figure 9 0.9 1.15 S Ciss Short-circuit input capacitance, common source 180 225 Coss Short-circuit output capacitance, common source VDS = 25 V, f = 1 MHz, VGS = 0, See Figure 11 100 138 pF Crss Short-circuit reverse transfer capacitance, common source f = 1 MHz, See Figure 11 75 100 pF NOTES: 2. Technique should limit TJ − TC to 10°C maximum. 3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. |
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